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  • Substrate
    • Sapphire
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    • LiTaO3_LiNbO3
    • AlN
    • GaAs
    • InP
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    • Other Glass
  • Optical Products
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    • GaN Epitaxy wafer
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  • Semiconductor equipment
  • Metal single crystal material

Featured products

  • 8Inch 200mm 4H-N SiC Wafer Conductive dummy research grade
    8Inch 200mm 4H-N SiC Wafer Condu...
  • 150mm 6 inch 0.7mm 0.5mm Sapphire Wafer Substrate Carrier C-Plane SSP/DSP
    150mm 6 inch 0.7mm 0.5mm Sapphir...
  • 4 inch Sapphire Wafer C-Plane SSP/DSP 0.43mm 0.65mm
    4 inch Sapphire Wafer C-Plane SS...
  • Sapphire window Sapphire glass lens Single crystal Al2O3material
    Sapphire window Sapphire glass l...
  • Dia50.8mm Sapphire Wafer Sapphire Window High Optical Transmittance DSP/SSP
    Dia50.8mm Sapphire Wafer Sapphir...
  • 50.8mm/100mm AlN Template on NPSS/FSS AlN template on sapphire
    50.8mm/100mm AlN Template on NPS...

Substrate

  • 8 inch 200mm Sapphire Wafer Carrier Subsrate 1SP 2SP 0.5mm 0.75mm

    8 inch 200mm Sapphire Wafer Carrier Subsrate 1SP 2SP 0.5mm 0.75mm

  • 4 inch High purity Al2O3 99.999% Sapphire substrate wafer Dia101.6×0.65mmt with Primary Flat Length

    4 inch High purity Al2O3 99.999% Sapphire substrate wafer Dia101.6×0.65mmt with Primary Flat Length

  • 3inch 76.2mm 4H-Semi SiC substrate wafer Silicon Carbide Semi-insulting SiC wafers

    3inch 76.2mm 4H-Semi SiC substrate wafer Silicon Carbide Semi-insulting SiC wafers

  • 2inch 50.8mm Silicon Carbide SiC Wafers Doped Si N-type Production Research and Dummy grade

    2inch 50.8mm Silicon Carbide SiC Wafers Doped Si N-type Production Research and Dummy grade

  • 2 inch 50.8mm Sapphire Wafer C-Plane M-plane R-plane A-plane

    2 inch 50.8mm Sapphire Wafer C-Plane M-plane R-plane A-plane

  • 4H-N 4 inch SiC substrate wafer Silicon Carbide Production Dummy Research grade

    4H-N 4 inch SiC substrate wafer Silicon Carbide Production Dummy Research grade

  • 6inch 150mm Silicon Carbide SiC Wafers 4H-N type for MOS or SBD Production Research and Dummy grade

    6inch 150mm Silicon Carbide SiC Wafers 4H-N type for MOS or SBD Production Research and Dummy grade

  • 2inch 50.8mm Germanium Wafer Substrate Single crystal 1SP 2SP

    2inch 50.8mm Germanium Wafer Substrate Single crystal 1SP 2SP

  • 3inch 4 inch 6inch LiNbO3 Wafer Substrate Single crystal material

    3inch 4 inch 6inch LiNbO3 Wafer Substrate Single crystal material

  • 8 Inch Lithium Niobate Wafer LiNbO3 LN wafer

    8 Inch Lithium Niobate Wafer LiNbO3 LN wafer

  • 2 inch 50.8mm Sapphire Wafer C-Plane M-plane R-plane A-plane Thickness 350um 430um 500um

    2 inch 50.8mm Sapphire Wafer C-Plane M-plane R-plane A-plane Thickness 350um 430um 500um

  • 2 inch 50.8mm Thickness 0.1mm 0.2mm 0.43mm Sapphire Wafer C-Plane M-plane R-plane A-plane

    2 inch 50.8mm Thickness 0.1mm 0.2mm 0.43mm Sapphire Wafer C-Plane M-plane R-plane A-plane

<< < Previous 67891011 Next > >> Page 10 / 11

NEWS

  • Silicon Carbide Ceramics vs. Semiconductor Silicon Carbide: The Same Material with Two Distinct Destinies
    30/07/2025

    Silicon Carbide Ceramics vs. Semiconductor Silicon Carbide: The Same Material with Two Distinct D...

  • Advances in High-Purity Silicon Carbide Ceramic Preparation Technologies
    30/07/2025

    Advances in High-Purity Silicon Carbide Ceramic Preparation Technologies

  • Technical Principles and Processes of LED Epitaxial Wafers
    25/07/2025

    Technical Principles and Processes of LED Epitaxial Wafers

  • Key Considerations for High-Quality Silicon Carbide Single Crystal Preparation
    25/07/2025

    Key Considerations for High-Quality Silicon Carbide Single Crystal Preparation

  • Lithium Niobate on Insulator (LNOI): Driving the Advancement of Photonic Integrated Circuits
    18/07/2025

    Lithium Niobate on Insulator (LNOI): Driving the Advancement of Photonic Integrated Circuits

CONTACT

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  • +86 158 0194 2596
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  • eric@xkh-semitech.com
  • doris@xkh-semitech.com

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