150mm 6 inch 0.7mm 0.5mm Sapphire Wafer Substrate Carrier C-Plane SSP/DSP

Short Description:

All of the above are correct descriptions of sapphire crystals. The excellent performance of sapphire crystal makes it widely used in high-end technical fields. With the rapid development of the LED industry, the demand for sapphire crystal materials is also increasing.

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Applications for 6-inch sapphire wafers include:

1. LED manufacturing: sapphire wafer can be used as the substrate of LED chips, and its hardness and thermal conductivity can improve the stability and service life of LED chips.

2. Laser manufacturing: Sapphire wafer can also be used as the substrate of laser, to help improve the performance of laser and prolong the service life.

3. Semiconductor manufacturing: Sapphire wafers are widely used in the manufacture of electronic and optoelectronic devices, including optical synthesis, solar cells, high-frequency electronic devices, etc.

4. Other applications: Sapphire wafer can also be used to manufacture touch screen, optical devices, thin film solar cells and other high-tech products.


Material High purity single crystal Al2O3, sapphire wafer.
Dimension 150 mm +/- 0.05 mm, 6 inch
Thickness 1300 +/- 25 um
Orientation C plane (0001) off M (1-100) plane 0.2 +/- 0.05 degree
Primary flat orientation A plane +/- 1 degree
Primary flat length 47.5 mm +/- 1 mm
Total Thickness Variation (TTV) <20 um
Bow <25 um
Warp <25 um
Thermal Expansion Coefficient 6.66 x 10-6 / °C parallel to C axis, 5 x 10-6 /°C perpendicular to C axis
Dielectric Strength 4.8 x 105 V/cm
Dielectric Constant 11.5 (1 MHz) along C axis, 9.3 (1 MHz) perpendicular to C axis
Dielectric Loss Tangent (a.k.a. dissipation factor) less than 1 x 10-4
Thermal Conductivity 40 W/(m.K) at 20℃ 
Polishing single side polished (SSP) or double side polished (DSP) Ra < 0.5 nm (by AFM). The reverse side of SSP wafer was fine ground to Ra = 0.8 - 1.2 um.
Transmittance 88% +/-1 % @460 nm

Detailed Diagram

6inch Sapphire wafer4
6inch Sapphire wafer5

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