Products
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12 inch SIC substrate silicon carbide prime grade diameter 300mm large size 4H-N Suitable for high power device heat dissipation
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Dia300x1.0mmt Thickness Sapphire Wafer C-Plane SSP/DSP
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HPSI SiC wafer dia:3inch thickness:350um± 25 µm for Power Electronics
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8 inch SiC silicon carbide wafer 4H-N type 0.5mm production grade research grade custom polished substrate
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8 inch 200mm Sapphire substrate sapphire wafer thin thickness 1SP 2SP 0.5mm 0.75mm
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Single crystal Al2O3 99.999% Dia200mm sapphire wafers 1.0mm 0.75mm thickness
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156mm 159mm 6 inch Sapphire Wafer for carrier C-Plane DSP TTV
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C/A/M axis 4 inch sapphire wafers single crystal Al2O3,SSP DSP high hardness sapphire substrate
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3inch High purity Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-type SiC substrate SiC wafer Dia2inch new product
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Surface processing method of titanium-doped sapphire crystal laser rods
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8inch 200mm Silicon Carbide SiC Wafers 4H-N type Production grade 500um thickness