12 Inch SiC substrate Diameter 300mm Thickness 750μm 4H-N Type can be customized

Short Description:

At a critical juncture in the semiconductor industry’s transition toward more efficient and compact solutions, the emergence of 12-inch SiC substrate (12-inch silicon carbide substrate) has fundamentally transformed the landscape. Compared to traditional 6-inch and 8-inch specifications, the large-size advantage of the 12-inch substrate increases the number of chips produced per wafer by more than fourfold. Additionally, the unit cost of 12-inch SiC substrate is reduced by 35-40% compared to conventional 8-inch substrates, which is crucial for the widespread adoption of end products.
By employing our proprietary vapor transport growth technology, we have achieved industry-leading control over dislocation density in 12-inch crystals, providing an exceptional material foundation for subsequent device manufacturing. This advancement is particularly significant amid the current global chip shortage.

Key power devices in everyday applications—such as EV fast-charging stations and 5G base stations—are increasingly adopting this large-size substrate. Especially in high-temperature, high-voltage, and other harsh operating environments, 12-inch SiC substrate demonstrates far superior stability compared to silicon-based materials.

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Technical parameters

12 inch Silicon Carbide (SiC) Substrate Specification
Grade		ZeroMPD Production Grade(Z Grade)	Standard Production Grade(P Grade)		Dummy Grade (D Grade)
Diameter		3 0 0 mm~1305mm
Thickness	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Wafer Orientation		Off axis : 4.0° toward <1120 >±0.5° for 4H-N, On axis : <0001>±0.5° for 4H-SI
Micropipe Density	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Resistivity	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Primary Flat Orientation		{10-10} ±5.0°
Primary Flat Length	4H-N	N/A
	4H-SI	Notch
Edge Exclusion		3 mm
LTV/TTV/Bow /Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Roughness		Polish Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Edge Cracks By High Intensity Light Hex Plates By High Intensity Light Polytype Areas By High Intensity Light Visual Carbon Inclusions Silicon Surface Scratches By High Intensity Light		None Cumulative area ≤0.05% None Cumulative area ≤0.05% None			Cumulative length ≤ 20 mm, single length≤2 mm Cumulative area ≤0.1% Cumulative area≤3% Cumulative area ≤3% Cumulative length≤1×wafer diameter
Edge Chips By High Intensity Light		None permitted ≥0.2mm width and depth			7 allowed, ≤1 mm each
(TSD) Threading screw dislocation		≤500 cm-2		N/A
(BPD) Base plane dislocation		≤1000 cm-2		N/A
Silicon Surface Contamination By High Intensity Light		None
Packaging		Multi-wafer Cassette Or Single Wafer Container
Notes:
1 Defects limits apply to entire wafer surface except for the edge exclusion area. 2The scratches should be checked on Si face only. 3 The dislocation data is only from KOH etched wafers.

Key Features

1.Production Capacity and Cost Advantages: The mass production of 12-inch SiC substrate (12-inch silicon carbide substrate) marks a new era in semiconductor manufacturing. The number of chips obtainable from a single wafer reaches 2.25 times that of 8-inch substrates, directly driving a leap in production efficiency. Customer feedback indicates that adopting 12-inch substrates has reduced their power module production costs by 28%, creating a decisive competitive advantage in the fiercely contested market.
2.Outstanding Physical Properties: The 12-inch SiC substrate inherits all advantages of silicon carbide material - its thermal conductivity is 3 times that of silicon, while its breakdown field strength reaches 10 times that of silicon. These characteristics enable devices based on 12-inch substrates to operate stably in high-temperature environments exceeding 200°C, making them particularly suitable for demanding applications such as electric vehicles.
3.Surface Treatment Technology: We have developed a novel chemical mechanical polishing (CMP) process specifically for 12-inch SiC substrates, achieving atomic-level surface flatness (Ra<0.15nm). This breakthrough solves the worldwide challenge of large-diameter silicon carbide wafer surface treatment, clearing obstacles for high-quality epitaxial growth.
4.Thermal Management Performance: In practical applications, 12-inch SiC substrates demonstrate remarkable heat dissipation capabilities. Test data shows that under the same power density, devices using 12-inch substrates operate at temperatures 40-50°C lower than silicon-based devices, significantly extending equipment service life.

Main Applications

1.New Energy Vehicle Ecosystem: The 12-inch SiC substrate (12-inch silicon carbide substrate) is revolutionizing electric vehicle powertrain architecture. From onboard chargers (OBC) to main drive inverters and battery management systems, the efficiency improvements brought by 12-inch substrates increase vehicle range by 5-8%. Reports from a leading automaker indicate that adopting our 12-inch substrates reduced energy loss in their fast-charging system by an impressive 62%.
2.Renewable Energy Sector: In photovoltaic power stations, inverters based on 12-inch SiC substrates not only feature smaller form factors but also achieve conversion efficiency exceeding 99%. Particularly in distributed generation scenarios, this high efficiency translates to annual savings of hundreds of thousands of yuan in electricity losses for operators.
3.Industrial Automation: Frequency converters utilizing 12-inch substrates demonstrate excellent performance in industrial robots, CNC machine tools, and other equipment. Their high-frequency switching characteristics improve motor response speed by 30% while reducing electromagnetic interference to one-third of conventional solutions.
4.Consumer Electronics Innovation: Next-generation smartphone fast-charging technologies have begun adopting 12-inch SiC substrates. It is projected that fast-charging products above 65W will fully transition to silicon carbide solutions, with 12-inch substrates emerging as the optimal cost-performance choice.

XKH Customized Services for 12-inch SiC Substrate

To meet specific requirements for 12-inch SiC substrates (12-inch silicon carbide substrates), XKH offers comprehensive service support:
1.Thickness Customization:
We provide 12-inch substrates in various thickness specifications including 725μm to meet different application needs.
2.Doping concentration：
Our manufacturing supports multiple conductivity types including n-type and p-type substrates, with precise resistivity control in the range of 0.01-0.02Ω·cm.
3.Testing Services:
With complete wafer-level testing equipment, we provide full inspection reports.
XKH understands that each customer has unique requirements for 12-inch SiC substrates. We therefore offer flexible business cooperation models to provide the most competitive solutions, whether for:
· R&D samples
· Volume production purchases
Our customized services ensure we can meet your specific technical and production needs for 12-inch SiC substrates.