Semiconductor Ion Implantation Equipment

Short Description:

Ion implantation is the primary doping method in the semiconductor industry. It is a technique that injects specific elements into a target material by utilizing electric fields for acceleration, as well as magnetic fields for mass separation and beam collimation; through high-precision control, it ensures the uniformity of the implanted dose.

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Detailed Diagram

Semiconductor Ion Implantation Equipment

Owing to its advantages—including precise control, anisotropic characteristics, and room-temperature processing—it is widely applied in fields such as integrated circuits, compound semiconductors, and display panels, thereby establishing itself as the mainstream doping process. Ion implantation equipment features complex structures and presents significant technical challenges, making it one of the critical pieces of machinery in the semiconductor manufacturing workflow.

Leveraging over two decades of experience in semiconductor R&D and manufacturing, coupled with continuous technological innovation, we have achieved breakthroughs in several key technologies—including electrostatic acceleration, dose control, and electromagnetic mass separation—leading to the development of two medium-current ion implanter models. The company remains committed to expanding its product portfolio to achieve comprehensive coverage of ion implantation equipment, thereby providing the semiconductor manufacturing sector with a complete suite of ion implantation solutions.

Ai300 Medium Beam Ion Implanter (12-inch)

(1) Product Overview

The Ai300 is a medium beam ion implantation system designed for 12-inch wafer processing in advanced semiconductor manufacturing. It is primarily used for medium-dose and medium-to-high energy implantation steps, including well formation, channel engineering, and lightly doped drain (LDD) structures in CMOS processes. The system provides precise control of dopant depth and concentration profiles through stable beam delivery and accurate angle control, enabling optimization of device electrical characteristics.

(2) Key Specifications

Wafer size: 12 inch
Energy range: 5–300 keV
Implant species: C, B, P, N, He, Ar
Implant angle: 0°–45° (accuracy ≤0.1°)
Dose range: 1E11–1E16 ions/cm²
Beam stability: ≤10%/hour
Beam parallelism: ≤0.1°
Throughput: ≥500 WPH
Uniformity/Repeatability: ≤0.5%

(3) Technical Features and Advantages

The Ai300 integrates a high-stability ion source and advanced beam control system, ensuring minimal beam fluctuation during extended operation. Its excellent beam parallelism guarantees uniform dopant distribution across the wafer, which is critical for advanced nodes. In addition, its high throughput supports high-volume manufacturing (HVM) requirements in 12-inch fabs.

(4) Applications

Advanced logic devices (CMOS, FinFET)
DRAM and NAND memory
Precision doping processes

FAQ

1. What is ion implantation and why is it important in semiconductor manufacturing?

Ion implantation is a process in which dopant ions are accelerated and implanted into a semiconductor substrate to modify its electrical properties. Compared with traditional diffusion methods, ion implantation offers precise control over dopant concentration, depth, and lateral distribution, making it indispensable for advanced semiconductor device fabrication.

2. What is the difference between medium beam and high beam ion implanters?

Medium beam implanters are typically used for precision doping applications with moderate dose and wider energy ranges, such as well formation and channel engineering.
High beam implanters, on the other hand, are optimized for high-dose implantation with higher beam currents, commonly used for source/drain formation and contact engineering.

3. How do I choose the right ion implantation system for my process?

The selection depends on several key factors:

Dose requirement (low/medium vs high dose)
Energy range (shallow vs deep junction)
Wafer size (6/8 inch vs 12 inch)
Material type (Si vs SiC)

For example:

Use Ai300 for advanced CMOS precision doping
Use Ai80HC for high-dose source/drain processes
Use Ai350HT for SiC high-temperature implantation

About Us

XKH specializes in high-tech development, production, and sales of special optical glass and new crystal materials. Our products serve optical electronics, consumer electronics, and the military. We offer Sapphire optical components, mobile phone lens covers, Ceramics, LT, Silicon Carbide SIC, Quartz, and semiconductor crystal wafers. With skilled expertise and cutting-edge equipment, we excel in non-standard product processing, aiming to be a leading optoelectronic materials high-tech enterprise.