Substrate
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6 in Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
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SiC Ingot 4H type Dia 4inch 6inch Thickness 5-10mm Research / Dummy Grade
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6inch sapphire Boule sapphire blank single crystal Al2O3 99.999%
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Sic Substrate Silicon Carbide Wafer 4H-N Type High Hardness Corrosion Resistance Prime Grade Polishing
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2inch Silicon Carbide Wafer 6H-N Type Prime Grade Research Grade Dummy Grade 330μm 430μm Thickness
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2inch silicon carbide substrate 6H-N double-sided polished diameter 50.8mm production grade research grade
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p-type 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Zero MPD
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SiC substrate P-type 4H/6H-P 3C-N 4inch withe thickness of 350um Production grade Dummy grade
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4H/6H-P 6inch SiC wafer Zero MPD grade Production Grade Dummy Grade
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P-type SiC wafer 4H/6H-P 3C-N 6inch thickeness 350 μm with Primary Flat Orientation
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TVG process on quartz sapphire BF33 wafer Glass wafer punching
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Single Crystal Silicon Wafer Si Substrate Type N/P Optional Silicon Carbide Wafer