Substrate
-
Indium Antimonide (InSb) wafers N type P type Epi ready undoped Te doped or Ge doped 2inch 3inch 4inch thickness Indium Antimonide (InSb) wafers
-
SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C type 2inch 3inch 4inch 6inch 8inch
-
sapphire ingot 3inch 4inch 6inch Monocrystal CZ KY method Customizable
-
2 inch Sic silicon carbide substrate 6H-N Type 0.33mm 0.43mm double-sided polishing High thermal conductivity low power consumption
-
GaAs high-power epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm for laser medical treatment
-
GaAs laser epitaxial wafer 4 inch 6 inch VCSEL vertical cavity surface emission laser wavelength 940nm single junction
-
2inch 3inch 4inch InP epitaxial wafer substrate APD light detector for fiber optic communications or LiDAR
-
sapphire ring made of synthetic sapphire material Transparent and customizable Mohs hardness of 9
-
Sapphire ingot dia 4inch× 80mm Monocrystalline Al2O3 99.999% Single Crystal
-
Sapphire Prism Sapphire Lens High transparency Al2O3 BK7 JGS1 JGS2 Material Optical Instrument
-
sapphire ring all-sapphire ring entirely crafted from sapphire Transparent lab-made sapphire material
-
SiC substrate 3inch 350um thickness HPSI type Prime Grade Dummy grade