SiC
-
4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer for MOS or SBD
-
SiC Epitaxial Wafer for Power Devices – 4H-SiC, N-type, Low Defect Density
-
4H-N Type SiC Epitaxial Wafer High Voltage High Frequency
-
3 inch High Purity (Undoped) Silicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)
-
4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research grade 500um thickness
-
4H-N/6H-N SiC Wafer Reasearch production Dummy grade Dia150mm Silicon carbide substrate
-
Au coated wafer，sapphire wafer，silicon wafer，SiC wafer ，2inch 4inch 6inch，Gold coated thickeness 10nm 50nm 100nm
-
SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C type 2inch 3inch 4inch 6inch 8inch
-
2 inch Sic silicon carbide substrate 6H-N Type 0.33mm 0.43mm double-sided polishing High thermal conductivity low power consumption
-
SiC substrate 3inch 350um thickness HPSI type Prime Grade Dummy grade
-
Silicon Carbide SiC Ingot 6inch N type Dummy/prime grade thickness can ba customized
-
6 in Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade