4H-N/6H-N SiC Wafer Reasearch production Dummy grade Dia150mm Silicon carbide substrate

Short Description:

We can provide high temperature superconducting thin film substrate, magnetic thin films and ferroelectric thin film substrate, semiconductor crystal, optical crystal, laser crystal materials, at the same time provide orientation, crystal cutting, grinding, polishing and other processing services. Our SiC substrates come from Tankeblue Factory in China.

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6 inch diameter silicon carbide (SiC) substrate specification

Grade	Zero MPD	Production	Research Grade	Dummy Grade
Diameter	150.0mm±0.25mm
Thickness	4H-N	350um±25um
	4H-SI	500um±25um
Wafer Orientation	On axis :<0001>±0.5°for 4H-SI Off axis : 4.0°toward<1120>±0.5°for 4H-N
Primary Flat	{10-10}±5.0°
Primary Flat Length	47.5mm±2.5mm
Edge exclusion	3mm
TTV/Bow/Warp	≤15um/≤40um/≤60um
Micropipe Density	≤1cm-2	≤5cm-2	≤15cm-2	≤50cm-2
Resistivity 4H-N 4H-SI	0.015~0.028Ω!cm
	≥1E5Ω!cm
Roughness	Polish Ra ≤1nm CMP Ra≤0.5nm
#Cracks by high intensity light	None		1 allowed ,≤2mm	Cumulative length ≤10mm,single length≤2mm
*Hex plates by high intensity light	Cumulative area ≤1%		Cumulative area ≤ 2%	Cumulative area ≤ 5%
*Polytype areas by high intensity light	None		Cumulative area ≤ 2%	Cumulative area ≤ 5%
*&Scratches by high intensity light	3 scratches to 1 x wafer diameter cumulative length		5 scratches to 1 x wafer diameter cumulative length	5scratches to 1 x wafer diameter cumulative length
Edge chip	None		3 allowed ,≤0.5mm each	5 allowed ,≤1mm each
Contamination by high intensity light	None

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During and after the manufacture or machining of your products ,quality control department is involved in making sure that all materials and tolerances meet or exceed your specification.

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we are at your side by any time when you have problem,and resolve it in 10hours.