6inch 150mm Silicon Carbide SiC Wafers 4H-N type for MOS or SBD Production Research and Dummy grade

Short Description:

The 6-inch silicon carbide single crystal substrate is a high-performance material with excellent physical and chemical properties. Manufactured from high-purity silicon carbide single crystal material, it exhibits superior thermal conductivity, mechanical stability, and high-temperature resistance. This substrate, made with precision manufacturing processes and high-quality materials, has become the preferred material for the fabrication of high-efficiency electronic devices in various fields.

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Application Fields

The 6-inch silicon carbide single crystal substrate plays a crucial role in multiple industries. Firstly, it is widely used in the semiconductor industry for the fabrication of high-power electronic devices such as power transistors, integrated circuits, and power modules. Its high thermal conductivity and high-temperature resistance enable better heat dissipation, resulting in improved efficiency and reliability. Secondly, silicon carbide wafers are essential in research fields for the development of new materials and devices. Additionally, the silicon carbide wafer finds extensive applications in the field of optoelectronics, including the manufacturing of LEDs and laser diodes.

Product Specifications

The 6-inch silicon carbide single crystal substrate has a diameter of 6 inches (approximately 152.4 mm). The surface roughness is Ra < 0.5 nm, and the thickness is 600 ± 25 μm. The substrate can be customized with either N-type or P-type conductivity, based on customer requirements. Moreover, it exhibits exceptional mechanical stability, capable of withstanding pressure and vibration.

Diameter		150±2.0mm（6inch）
Thickness		350 μm±25μm
Orientation		On axis ： <0001>±0.5°		Off axis：4.0° toward 1120±0.5°
Polytype		4H
Resistivity(Ω·cm)	4H-N	0.015~0.028 Ω·cm/0.015~0.025ohm·cm
	4/6H-SI	>1E5
Primary flat orientation		{10-10}±5.0°
Primary flat length (mm)		47.5 mm±2.5 mm
Edge		Chamfer
TTV/Bow /Warp (um)		≤15 /≤40 /≤60
AFM Front (Si-face)		Polish Ra≤1 nm
		CMP Ra≤0.5 nm
LTV		≤3μm(10mm*10mm)	≤5μm(10mm*10mm)		≤10μm(10mm*10mm)
TTV		≤5μm	≤10μm		≤15μm
Orange peel/pits/cracks/contamination/stains/striations		None	None		None
indents		None	None		None

The 6-inch silicon carbide single crystal substrate is a high-performance material widely used in the semiconductor, research, andoptoelectronics industries. It offers excellent thermal conductivity, mechanical stability, and high-temperature resistance, making itsuitable for the fabrication of high-power electronic devices and new material research. We provide various specifications andcustomization options to meet diverse customer demands. Contact us for more details on silicon carbide wafers!