SiC
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12 inch SIC substrate silicon carbide prime grade diameter 300mm large size 4H-N Suitable for high power device heat dissipation
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8 inch SiC silicon carbide wafer 4H-N type 0.5mm production grade research grade custom polished substrate
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HPSI SiC wafer dia:3inch thickness:350um± 25 µm for Power Electronics
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3inch High purity Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-type SiC substrate SiC wafer Dia2inch new product
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8inch 200mm Silicon Carbide SiC Wafers 4H-N type Production grade 500um thickness
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade
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Silicon Carbide (SiC) Single-Crystal Substrate – 10×10mm Wafer
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4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer for MOS or SBD
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SiC Epitaxial Wafer for Power Devices – 4H-SiC, N-type, Low Defect Density
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4H-N Type SiC Epitaxial Wafer High Voltage High Frequency
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3 inch High Purity (Undoped) Silicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)