Products
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Surface processing method of titanium-doped sapphire crystal laser rods
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8inch 200mm Silicon Carbide SiC Wafers 4H-N type Production grade 500um thickness
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade
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200mm 8inch GaN on sapphire Epi-layer wafer substrate
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Sapphire tube KY Method all transparent Customizable
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Microjet laser technology equipment wafer cutting SiC material processing
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Silicon carbide diamond wire cutting machine 4/6/8/12 inch SiC ingot processing
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CVD method for producing high purity SiC raw materials in silicon carbide synthesis furnace at 1600℃
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Silicon carbide resistance long crystal furnace growing 6/8/12inch inch SiC ingot crystal PVT method
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Double station square machine monocrystalline silicon rod processing 6/8/12 inch surface flatness Ra≤0.5μm
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Ruby optics Ruby rod optical window titanium gem laser crystal
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Ruby optical window High transmittance Mohs Hardness 9 laser mirror protection window