LT Lithium Tantalate (LiTaO3) Crystal 2inch/3inch/4inch/6寸inch Orientaiton Y-42°/36°/108° Thickness 250-500um

Short Description:

LiTaO₃ wafers represent a critical piezoelectric and ferroelectric material system, exhibiting exceptional piezoelectric coefficients, thermal stability, and optical properties, making them indispensable for surface acoustic wave (SAW) filters, bulk acoustic wave (BAW) resonators, optical modulators, and infrared detectors. XKH specializes in high-quality LiTaO₃ wafer R&D and production, utilizing advanced Czochralski (CZ) crystal growth and liquid phase epitaxy (LPE) processes to ensure superior crystalline homogeneity with defect densities <100/cm².

XKH supply 3-inch, 4-inch, and 6-inch LiTaO₃ wafers with multiple crystallographic orientations (X-cut, Y-cut, Z-cut), supporting customized doping (Mg, Zn) and poling treatments to meet specific application requirements. The material’s dielectric constant (ε~40-50), piezoelectric coefficient (d₃₃~8-10 pC/N), and Curie temperature (~600°C) establish LiTaO₃ as the preferred substrate for high-frequency filters and precision sensors.

Our vertically integrated manufacturing covers crystal growth, wafering, polishing, and thin-film deposition, with monthly production capacity exceeding 3,000 wafers to serve 5G communications, consumer electronics, photonics, and defense industries. We provide comprehensive technical consulting, sample characterization, and low-volume prototyping services to deliver optimized LiTaO₃ solutions.

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Features

Technical parameters

Name	Optical-grade LiTaO3	Sound table level LiTaO3
Axial	Z cut + / - 0.2 °	36 ° Y cut / 42 ° Y cut / X cut(+ / - 0.2 °)
Diameter	76.2mm + / - 0.3mm/100±0.2mm	76.2mm + /-0.3mm 100mm + /-0.3mm 0r 150±0.5mm
Datum plane	22mm + / - 2mm	22mm + /-2mm32mm + /-2mm
Thickness	500um + /-5mm1000um + /-5mm	500um + /-20mm350um + /-20mm
TTV	≤ 10um	≤ 10um
Curie temperature	605 °C + / - 0.7 °C (DTAmethod)	605 °C + / -3 °C (DTAmethod
Surface quality	Double-sided polishing	Double-sided polishing
Chamfered edges	edge rounding	edge rounding

Key Characteristics

1.Crystal Structure and Electrical Performance

· Crystallographic Stability: 100% 4H-SiC polytype dominance, zero multicrystalline inclusions (e.g., 6H/15R), with XRD rocking curve full-width at half-maximum (FWHM) ≤32.7 arcsec.
· High Carrier Mobility: Electron mobility of 5,400 cm²/V·s (4H-SiC) and hole mobility of 380 cm²/V·s, enabling high-frequency device designs.
·Radiation Hardness: Withstands 1 MeV neutron irradiation with a displacement damage threshold of 1×10¹⁵ n/cm², ideal for aerospace and nuclear applications.

2.Thermal and Mechanical Properties

· Exceptional Thermal Conductivity: 4.9 W/cm·K (4H-SiC), triple that of silicon, supporting operation above 200°C.
· Low Thermal Expansion Coefficient: CTE of 4.0×10⁻⁶/K (25–1000°C), ensuring compatibility with silicon-based packaging and minimizing thermal stress.

3.Defect Control and Processing Precision

· Micropipe Density: <0.3 cm⁻² (8-inch wafers), dislocation density <1,000 cm⁻² (verified via KOH etching).
· Surface Quality: CMP-polished to Ra <0.2 nm, meeting EUV lithography-grade flatness requirements.

Key Applications

Domain	Application Scenarios	Technical Advantages
Optical Communications	100G/400G lasers, silicon photonics hybrid modules	InP seed substrates enable direct bandgap (1.34 eV) and Si-based heteroepitaxy, reducing optical coupling loss.
New Energy Vehicles	800V high-voltage inverters, onboard chargers (OBC)	4H-SiC substrates withstand >1,200 V, reducing conduction losses by 50% and system volume by 40%.
5G Communications	Millimeter-wave RF devices (PA/LNA), base station power amplifiers	Semi-insulating SiC substrates (resistivity >10⁵ Ω·cm) enable high-frequency (60 GHz+) passive integration.
Industrial Equipment	High-temperature sensors, current transformers, nuclear reactor monitors	InSb seed substrates (0.17 eV bandgap) deliver magnetic sensitivity up to 300%@10 T.

LiTaO₃ Wafers - Key Characteristics

1. Superior Piezoelectric Performance

· High piezoelectric coefficients (d₃₃~8-10 pC/N, K²~0.5%) enable high-frequency SAW/BAW devices with insertion loss <1.5dB for 5G RF filters

· Excellent electromechanical coupling supports wide-bandwidth (≥5%) filter designs for sub-6GHz and mmWave applications

2. Optical Properties

· Broadband transparency (>70% transmission from 400-5000nm) for electro-optic modulators achieving >40GHz bandwidth

· Strong nonlinear optical susceptibility (χ⁽²⁾~30pm/V) facilitates efficient second harmonic generation (SHG) in laser systems

3. Environmental Stability

· High Curie temperature (600°C) maintains piezoelectric response in automotive-grade (-40°C to 150°C) environments

· Chemical inertness against acids/alkalies (pH1-13) ensures reliability in industrial sensor applications

4. Customization Capabilities

· Orientation engineering: X-cut (51°), Y-cut (0°), Z-cut (36°) for tailored piezoelectric responses

· Doping options: Mg-doped (optical damage resistance), Zn-doped (enhanced d₃₃)

· Surface finishes: Epitaxial-ready polishing (Ra<0.5nm), ITO/Au metallization

LiTaO₃ Wafers - Primary Applications

1. RF Front-End Modules

· 5G NR SAW filters (Band n77/n79) with temperature coefficient of frequency (TCF) <|-15ppm/°C|

· Ultra-wideband BAW resonators for WiFi 6E/7 (5.925-7.125GHz)

2. Integrated Photonics

· High-speed Mach-Zehnder modulators (>100Gbps) for coherent optical communications

· QWIP infrared detectors with cutoff wavelengths tunable from 3-14μm

3. Automotive Electronics

· Ultrasonic parking sensors with >200kHz operational frequency

· TPMS piezoelectric transducers surviving -40°C to 125°C thermal cycling

4. Defense Systems

· EW receiver filters with >60dB out-of-band rejection

· Missile seeker IR windows transmitting 3-5μm MWIR radiation

5. Emerging Technologies

· Optomechanical quantum transducers for microwave-to-optical conversion

· PMUT arrays for medical ultrasound imaging (>20MHz resolution)

LiTaO₃ Wafers - XKH Services

1. Supply Chain Management

· Boule-to-wafer processing with 4-week lead time for standard specifications

· Cost-optimized production delivering 10-15% price advantage versus competitors

2. Custom Solutions

· Orientation-specific wafering: 36°±0.5° Y-cut for optimal SAW performance

· Doped compositions: MgO (5mol%) doping for optical applications

Metallization services: Cr/Au (100/1000Å) electrode patterning

3. Technical Support

· Material characterization: XRD rocking curves (FWHM<0.01°), AFM surface analysis

· Device simulation: FEM modeling for SAW filter design optimization

Conclusion

LiTaO₃ wafers continue to enable technological advancements across RF communications, integrated photonics, and harsh-environment sensors. XKH's material expertise, manufacturing precision, and application engineering support help customers overcome design challenges in next-generation electronic systems.