Customized SiC Seed Crystal Substrates Dia 205/203/208 4H-N Type for Optical Communications

Short Description:

SiC (silicon carbide) seed crystal substrates, as the core carriers of third-generation semiconductor materials, leverage their high thermal conductivity (4.9 W/cm·K), ultra-high breakdown field strength (2–4 MV/cm), and wide bandgap (3.2 eV)to serve as foundational materials for optoelectronics, new energy vehicles, 5G communications, and aerospace applications. Through advanced fabrication technologies such as physical vapor transport (PVT) and liquid phase epitaxy (LPE), XKH provide 4H/6H-N-type, semi-insulating, and 3C-SiC polytype seed substrates in 2–12-inch wafer formats, with micropipe densities below 0.3 cm⁻², resistivity ranging from 20–23 mΩ·cm, and surface roughness (Ra) <0.2 nm. Our services include heteroepitaxial growth (e.g., SiC-on-Si), nanoscale precision machining (±0.1 μm tolerance), and global rapid delivery, empowering clients to overcome technical barriers and accelerate carbon neutrality and intelligent transformation.

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Features

Technical parameters

Silicon carbide seed wafer
Polytype	4H
Surface orientation error	4°toward<11-20>±0.5º
Resistivity	customization
Diameter	205±0.5mm
Thickness	600±50μm
Roughness	CMP,Ra≤0.2nm
Micropipe Density	≤1 ea/cm2
Scratches	≤5,Total Length≤2*Diameter
Edge chips/indents	None
Front laser marking	None
Scratches	≤2,Total Length≤Diameter
Edge chips/indents	None
Polytype areas	None
Back laser marking	1mm (from top edge)
Edge	Chamfer
Packaging	Multi-wafer cassette

Key Characteristics

1. Crystal Structure and Electrical Performance

· Crystallographic Stability: 100% 4H-SiC polytype dominance, zero multicrystalline inclusions (e.g., 6H/15R), with XRD rocking curve full-width at half-maximum (FWHM) ≤32.7 arcsec.

· High Carrier Mobility: Electron mobility of 5,400 cm²/V·s (4H-SiC) and hole mobility of 380 cm²/V·s, enabling high-frequency device designs.

·Radiation Hardness: Withstands 1 MeV neutron irradiation with a displacement damage threshold of 1×10¹⁵ n/cm², ideal for aerospace and nuclear applications.

2. Thermal and Mechanical Properties

· Exceptional Thermal Conductivity: 4.9 W/cm·K (4H-SiC), triple that of silicon, supporting operation above 200°C.

· Low Thermal Expansion Coefficient: CTE of 4.0×10⁻⁶/K (25–1000°C), ensuring compatibility with silicon-based packaging and minimizing thermal stress.

3. Defect Control and Processing Precision

· Micropipe Density: <0.3 cm⁻² (8-inch wafers), dislocation density <1,000 cm⁻² (verified via KOH etching).

· Surface Quality: CMP-polished to Ra <0.2 nm, meeting EUV lithography-grade flatness requirements.

Key Applications

Domain	Application Scenarios	Technical Advantages
Optical Communications	100G/400G lasers, silicon photonics hybrid modules	InP seed substrates enable direct bandgap (1.34 eV) and Si-based heteroepitaxy, reducing optical coupling loss.
New Energy Vehicles	800V high-voltage inverters, onboard chargers (OBC)	4H-SiC substrates withstand >1,200 V, reducing conduction losses by 50% and system volume by 40%.
5G Communications	Millimeter-wave RF devices (PA/LNA), base station power amplifiers	Semi-insulating SiC substrates (resistivity >10⁵ Ω·cm) enable high-frequency (60 GHz+) passive integration.
Industrial Equipment	High-temperature sensors, current transformers, nuclear reactor monitors	InSb seed substrates (0.17 eV bandgap) deliver magnetic sensitivity up to 300%@10 T.

Key Advantages

SiC (silicon carbide) seed crystal substrates deliver unparalleled performance with 4.9 W/cm·K thermal conductivity, 2–4 MV/cm breakdown field strength, and 3.2 eV wide bandgap, enabling high-power, high-frequency, and high-temperature applications. Featuring zero micropipe density and <1,000 cm⁻² dislocation density, these substrates ensure reliability in extreme conditions. Their chemical inertness and CVD-compatible surfaces (Ra <0.2 nm) support advanced heteroepitaxial growth (e.g., SiC-on-Si) for optoelectronics and EV power systems.

XKH Services:

1. Customized Production

· Flexible Wafer Formats: 2–12-inch wafers with circular, rectangular, or custom-shaped cuts (±0.01 mm tolerance).

· Doping Control: Precise nitrogen (N) and aluminum (Al) doping via CVD, achieving resistivity ranges from 10⁻³ to 10⁶ Ω·cm.

2. Advanced Process Technologies

· Heteroepitaxy: SiC-on-Si (compatible with 8-inch silicon lines) and SiC-on-Diamond (thermal conductivity >2,000 W/m·K).

· Defect Mitigation: Hydrogen etching and annealing to reduce micropipe/density defects, improving wafer yield to >95%.

3. Quality Management Systems

· End-to-End Testing: Raman spectroscopy (polytype verification), XRD (crystallinity), and SEM (defect analysis).

· Certifications: Compliant with AEC-Q101 (automotive), JEDEC (JEDEC-033), and MIL-PRF-38534 (military-grade).

4. Global Supply Chain Support

· Production Capacity: Monthly output >10,000 wafers (60% 8-inch), with 48-hour emergency delivery.

· Logistics Network: Coverage in Europe, North America, and Asia-Pacific via air/sea freight with temperature-controlled packaging.

5. Technical Co-Development

· Joint R&D Labs: Collaborate on SiC power module packaging optimization (e.g., DBC substrate integration).

· IP Licensing: Provide GaN-on-SiC RF epitaxial growth technology licensing to reduce client R&D costs.

Summary

SiC (silicon carbide) seed crystal substrates, as a strategic material, are reshaping global industrial chains through breakthroughs in crystal growth, defect control, and heterogeneous integration. By continuously advancing wafer defect reduction, scaling 8-inch production, and expanding heteroepitaxial platforms (e.g., SiC-on-Diamond), XKH deliver high-reliability, cost-effective solutions for optoelectronics, new energy, and advanced manufacturing. Our commitment to innovation ensures clients lead in carbon neutrality and intelligent systems, driving the next era of wide-bandgap semiconductor ecosystems.