6 Inch Conductive SiC Composite Substrate 4H Diameter 150mm Ra≤0.2nm Warp≤35μm

Short Description:

Driven by the semiconductor industry’s pursuit of higher performance and lower cost, the 6-inch conductive SiC composite substrate has emerged. Through innovative material composite technology, this 6-inch wafer achieves 85% of the performance of traditional 8-inch wafers while costing only 60% as much. The power devices in everyday applications like new energy vehicle charging stations, 5G base station power modules, and even variable-frequency drives in premium home appliances may already be using substrates of this type. Our patented multi-layer epitaxial growth technology enables atomic-level flat composite interfaces on SiC bases, with interface state density below 1×10¹¹/cm²·eV – a specification that has reached internationally leading levels.

Send email to us

Product Detail

Product Tags

Technical parameters

Items	Production grade	Dummy grade
Diameter	6-8 inch	6-8 inch
Thickness	350/500±25.0 μm	350/500±25.0 μm
Polytype	4H	4H
Resistivity	0.015-0.025 ohm·cm	0.015-0.025 ohm·cm
TTV	≤5 μm	≤20 μm
Warp	≤35 μm	≤55 μm
Front (Si-face) roughness	Ra≤0.2 nm (5μm×5μm)	Ra≤0.2 nm (5μm×5μm)

Key Features

1.Cost Advantage: Our 6-inch conductive SiC composite substrate employs proprietary "graded buffer layer" technology that optimizes material composition to reduce raw material costs by 38% while maintaining excellent electrical performance. Actual measurements show that 650V MOSFET devices using this substrate achieve a 42% reduction in cost per unit area compared to conventional solutions, which is significant for promoting SiC device adoption in consumer electronics.
2.Excellent Conductive Properties: Through precise nitrogen doping control processes, our 6-inch conductive SiC composite substrate achieves ultra-low resistivity of 0.012-0.022Ω·cm, with variation controlled within ±5%. Notably, we maintain resistivity uniformity even within the 5mm edge region of the wafer, solving a long-standing edge effect problem in the industry.
3.Thermal Performance: A 1200V/50A module developed using our substrate shows only 45℃ junction temperature rise above ambient at full load operation - 65℃ lower than comparable silicon-based devices. This is enabled by our "3D thermal channel" composite structure that improves lateral thermal conductivity to 380W/m·K and vertical thermal conductivity to 290W/m·K.
4.Process Compatibility: For the unique structure of 6-inch conductive SiC composite substrates, we developed a matching stealth laser dicing process achieving 200mm/s cutting speed while controlling edge chipping below 0.3μm. Additionally, we offer pre-nickel-plated substrate options that enable direct die bonding, saving customers two process steps.

Main Applications

Critical Smart Grid Equipment:

In ultra-high voltage direct current (UHVDC) transmission systems operating at ±800kV, IGCT devices utilizing our 6-inch conductive SiC composite substrates demonstrate remarkable performance enhancements. These devices achieve 55% reduction in switching losses during commutation processes, while increasing overall system efficiency to exceed 99.2%. The substrates' superior thermal conductivity (380W/m·K) enables compact converter designs that reduce substation footprint by 25% compared to conventional silicon-based solutions.

New Energy Vehicle Powertrains:

The drive system incorporating our 6-inch conductive SiC composite substrates achieves unprecedented inverter power density of 45kW/L - a 60% improvement over their previous 400V silicon-based design. Most impressively, the system maintains 98% efficiency across the entire operating temperature range from -40℃ to +175℃, solving the cold-weather performance challenges that have plagued EV adoption in northern climates. Real-world testing shows a 7.5% increase in winter range for vehicles equipped with this technology.

Industrial Variable Frequency Drives:

The adoption of our substrates in intelligent power modules (IPMs) for industrial servo systems is transforming manufacturing automation. In CNC machining centers, these modules deliver 40% faster motor response (reducing acceleration time from 50ms to 30ms) while cutting electromagnetic noise by 15dB to 65dB(A).

Consumer Electronics:

The consumer electronics revolution continues with our substrates enabling next-generation 65W GaN fast chargers. These compact power adapters achieve 30% volume reduction (down to 45cm³) while maintaining full power output, thanks to the superior switching characteristics of SiC-based designs. Thermal imaging shows maximum case temperatures of just 68°C during continuous operation - 22°C cooler than conventional designs - significantly improving product lifespan and safety.

XKH Customization Services

XKH provides comprehensive customization support for 6-inch conductive SiC composite substrates:

Thickness Customization: Options including 200μm, 300μm, and 350μm specifications
2. Resistivity Control: Adjustable n-type doping concentration from 1×10¹⁸ to 5×10¹⁸ cm⁻³

3. Crystal Orientation: Support for multiple orientations including (0001) off-axis 4° or 8°

4. Testing Services: Complete wafer-level parameter test reports

Our current lead time from prototyping to mass production can be as short as 8 weeks. For strategic customers, we offer dedicated process development services to ensure perfect matching with device requirements.