100mm 4inch GaN on Sapphire Epi-layer wafer Gallium nitride epitaxial wafer

(1) High temperature baking, sapphire substrate is first heated to 1050℃ in a hydrogen atmosphere, the purpose is to clean the substrate surface;

(2) When the substrate temperature drops to 510℃, a low-temperature GaN/AlN buffer layer with a thickness of 30nm is deposited on the surface of the sapphire substrate;

(3) Temperature rise to 10 ℃, the reaction gas ammonia, trimethylgallium and silane are injected, respectively control the corresponding flow rate, and the silicon-doped N-type GaN of 4um thickness is grown;

(4) The reaction gas of trimethyl aluminum and trimethyl gallium was used to prepare silicon-doped N-type A⒑ continents with a thickness of 0.15um;

(5) 50nm Zn-doped InGaN was prepared by injecting trimethylgallium, trimethylindium, diethylzinc and ammonia at a temperature of 8O0℃ and controlling different flow rates respectively;

(6) The temperature was increased to 1020℃, trimethylaluminum, trimethylgallium and bis (cyclopentadienyl) magnesium were injected to prepare 0.15um Mg doped P-type AlGaN and 0.5um Mg doped P-type G blood glucose;

(7) High quality P-type GaN Sibuyan film was obtained by annealing in nitrogen atmosphere at 700℃;

(8) Etching on the P-type G stasis surface to reveal the N-type G stasis surface;

(9) Evaporation of Ni/Au contact plates on p-GaNI surface, evaporation of △/Al contact plates on ll-GaN surface to form electrodes.