50.8mm 2inch GaN on sapphire Epi-layer wafer

Short Description:

As the third generation semiconductor material, gallium nitride has the advantages of high temperature resistance, high compatibility, high thermal conductivity and wide band gap. According to different substrate materials, gallium nitride epitaxial sheets can be divided into four categories: gallium nitride based on gallium nitride, silicon carbide based gallium nitride, sapphire based gallium nitride and silicon based gallium nitride. Silicon-based gallium nitride epitaxial sheet is the most widely used product with low production cost and mature production technology.

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Application of gallium nitride GaN epitaxial sheet

Based on the performance of gallium nitride, gallium nitride epitaxial chips are mainly suitable for high power, high frequency, and low voltage applications.

It is reflected in:

1) High bandgap: High bandgap improves the voltage level of gallium nitride devices and can output higher power than gallium arsenide devices, which is especially suitable for 5G communication base stations, military radar and other fields;

2) High conversion efficiency: the on-resistance of gallium nitride switching power electronic devices is 3 orders of magnitude lower than that of silicon devices, which can significantly reduce the on-switching loss;

3) High thermal conductivity: the high thermal conductivity of gallium nitride makes it have excellent heat dissipation performance, suitable for the production of high-power, high-temperature and other fields of devices;

4) Breakdown electric field strength: Although the breakdown electric field strength of gallium nitride is close to that of silicon nitride, due to semiconductor process, material lattice mismatch and other factors, the voltage tolerance of gallium nitride devices is usually about 1000V, and the safe use voltage is usually below 650V.

Item	GaN-T-C-U-C50	GaN-T-C-N-C50	GaN-T-C-P-C50
Dimensions	e 50.8mm ± 0.1mm
Thickness	4.5±0.5 um		4.5±0.5um
Orientation	C-plane(0001) ±0.5°
Conduction Type	N-type (Undoped)	N-type (Si-doped)	P-type (Mg-doped)
Resistivity(3O0K)	< 0.5 Q・cm	< 0.05 Q・cm	~ 10 Q・cm
Carrier Concentration	< 5x10¹⁷ cm^-3	> 1x10¹⁸ cm^-3	> 6x1016 cm^-3
Mobility	~ 300 cm²/V-s	~ 200 cm²/V-s	~ 10 cm²/V-s
Dislocation Density	Less than 5x10⁸ cm^-2 (calculated by FWHMs of XRD)
Substrate structure	GaN on Sapphire(Standard: SSP Option: DSP)
Useable Surface Area	> 90%
Package	Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.