150mm 200mm 6inch 8inch GaN on Silicon Epi-layer wafer Gallium nitride epitaxial wafer

Short Description:

The 6-inch GaN Epi-layer wafer is a high-quality semiconductor material consisting of layers of gallium nitride (GaN) grown on a silicon substrate. The material has excellent electronic transport properties and is ideal for manufacturing high-power and high-frequency semiconductor devices.

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Manufacturing method

The manufacturing process involves growing GaN layers on a sapphire substrate using advanced techniques such as metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). The deposition process is carried out under controlled conditions to ensure high crystal quality and uniform film.

6inch GaN-On-Sapphire applications: 6-inch sapphire substrate chips are widely used in microwave communications, radar systems, wireless technology and optoelectronics.

Some common applications include

1. Rf power amplifier

2. LED lighting industry

3. Wireless network communication equipment

4. Electronic devices in high temperature environment

5. Optoelectronic devices

Product specifications

- Size: The substrate diameter is 6 inches (about 150 mm).

- Surface quality: The surface has been finely polished to provide excellent mirror quality.

- Thickness: The thickness of GaN layer can be customized according to specific requirements.

- Packaging: The substrate is carefully packed with anti-static materials to prevent damage during transportation.

- Positioning edges: The substrate has specific positioning edges that facilitate alignment and operation during device preparation.

- Other parameters: Specific parameters such as thinness, resistivity and doping concentration can be adjusted according to customer requirements.

With their superior material properties and diverse applications, 6-inch sapphire substrate wafers are a reliable choice for the development of high-performance semiconductor devices in various industries.

Substrate	6” 1mm <111> p-type Si	6” 1mm <111> p-type Si
Epi ThickAvg	~5um	~7um
Epi ThickUnif	<2%	<2%
Bow	+/-45um	+/-45um
Cracking	<5mm	<5mm
Vertical BV	>1000V	>1400V
HEMT Al%	25-35%	25-35%
HEMT ThickAvg	20-30nm	20-30nm
Insitu SiN Cap	5-60nm	5-60nm
2DEG conc.	~10¹³cm^-2	~10¹³cm^-2
Mobility	~2000cm²/Vs (<2%)	~2000cm²/Vs (<2%)
Rsh	<330ohm/sq (<2%)	<330ohm/sq (<2%)