On the 26th, Power Cube Semi announced the successful development of South Korea's first 2300V SiC (Silicon Carbide) MOSFET semiconductor.
Compared to existing Si (Silicon) based semiconductors, SiC (Silicon Carbide) can withstand higher voltages, hence being hailed as the next-generation device leading the future of power semiconductors. It serves as a crucial component required for introducing cutting-edge technologies, such as the proliferation of electric vehicles and the expansion of data centers driven by artificial intelligence.
Power Cube Semi is a fabless company that develops power semiconductor devices in three main categories: SiC (Silicon Carbide), Si (Silicon), and Ga2O3 (Gallium Oxide). Recently, the company applied and sold high-capacity Schottky Barrier Diodes (SBDs) to a global electric vehicle company in China, gaining recognition for its semiconductor design and technology.
The release of the 2300V SiC MOSFET is noteworthy as the first such development case in South Korea. Infineon, a global power semiconductor company based in Germany, also announced the launch of its 2000V product in March, but without a 2300V product lineup.
Infineon's 2000V CoolSiC MOSFET, utilizing the TO-247PLUS-4-HCC package, meets the demand for increased power density among designers, ensuring system reliability even under stringent high-voltage and switching frequency conditions.
The CoolSiC MOSFET offers a higher direct current link voltage, enabling power increase without increasing current. It is the first discrete silicon carbide device on the market with a breakdown voltage of 2000V, utilizing the TO-247PLUS-4-HCC package with a creepage distance of 14mm and a clearance of 5.4mm. These devices feature low switching losses and are suitable for applications such as solar string inverters, energy storage systems, and electric vehicle charging.
The CoolSiC MOSFET 2000V product series is suitable for high-voltage DC bus systems up to 1500V DC. Compared to the 1700V SiC MOSFET, this device provides sufficient overvoltage margin for 1500V DC systems. The CoolSiC MOSFET offers a 4.5V threshold voltage and comes equipped with robust body diodes for hard commutation. With .XT connection technology, these components offer excellent thermal performance and strong humidity resistance.
In addition to the 2000V CoolSiC MOSFET, Infineon will soon launch complementary CoolSiC diodes packaged in TO-247PLUS 4-pin and TO-247-2 packages in the third quarter of 2024 and the last quarter of 2024, respectively. These diodes are particularly suitable for solar applications. Matching gate driver product combinations are also available.
The CoolSiC MOSFET 2000V product series is now available on the market. Furthermore, Infineon offers suitable evaluation boards: EVAL-COOLSIC-2KVHCC. Developers can use this board as a precise general test platform to evaluate all CoolSiC MOSFETs and diodes rated at 2000V, as well as the EiceDRIVER compact single-channel isolation gate driver 1ED31xx product series through dual-pulse or continuous PWM operation.
Gung Shin-soo, Chief Technology Officer of Power Cube Semi, stated, "We were able to extend our existing experience in the development and mass production of 1700V SiC MOSFETs to 2300V.
Post time: Apr-08-2024