2inch 50.8mm Silicon Carbide SiC Wafers Doped Si N-type Production Research and Dummy grade

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Shanghai Xinkehui Tech. Co.,Ltd offers the best selection and prices for high-quality silicon carbide wafers and substrates up to six-inch diameters with N- and semi-insulating types. Small and large semiconductor device companies and research labs worldwide use and rely on our silicone carbide wafers.

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Parametric criteria for 2-inch 4H-N undoped SiC wafers include

Substrate material: 4H silicon carbide (4H-SiC)

Crystal structure: tetrahexahedral (4H)

Doping: Undoped (4H-N)

Size: 2 inches

Conductivity type: N-type (n-doped)

Conductivity: Semiconductor

Market Outlook: 4H-N non-doped SiC wafers have many advantages, such as high thermal conductivity, low conduction loss, excellent high temperature resistance, and high mechanical stability, and thus have a broad market outlook in power electronics and RF applications. With the development of renewable energy, electric vehicles and communications, there is an increasing demand for devices with high efficiency, high temperature operation and high power tolerance, which provides a broader market opportunity for 4H-N non-doped SiC wafers.

Uses: 2-inch 4H-N non-doped SiC wafers can be used to fabricate a variety of power electronics and RF devices, including but not limited to:

1--4H-SiC MOSFETs: Metal oxide semiconductor field effect transistors for high power/high temperature applications. These devices have low conduction and switching losses to provide higher efficiency and reliability.

2--4H-SiC JFETs: Junction FETs for RF power amplifier and switching applications. These devices offer high frequency performance and high thermal stability.

3--4H-SiC Schottky Diodes: Diodes for high power, high temperature, high frequency applications. These devices offer high efficiency with low conduction and switching losses.

4--4H-SiC Optoelectronic Devices: Devices used in areas such as high power laser diodes, UV detectors and optoelectronic integrated circuits. These devices have high power and frequency characteristics.

In summary, 2-inch 4H-N non-doped SiC wafers have the potential for a wide range of applications, especially in power electronics and RF. Their superior performance and high-temperature stability make them a strong contender to replace traditional silicon materials for high-performance, high-temperature and high-power applications.