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    • Sapphire
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Featured products

  • 8Inch 200mm 4H-N SiC Wafer Conductive dummy research grade
    8Inch 200mm 4H-N SiC Wafer Condu...
  • 150mm 6 inch 0.7mm 0.5mm Sapphire Wafer Substrate Carrier C-Plane SSP/DSP
    150mm 6 inch 0.7mm 0.5mm Sapphir...
  • 4 inch Sapphire Wafer C-Plane SSP/DSP 0.43mm 0.65mm
    4 inch Sapphire Wafer C-Plane SS...
  • Sapphire window Sapphire glass lens Single crystal Al2O3material
    Sapphire window Sapphire glass l...
  • Dia50.8mm Sapphire Wafer Sapphire Window High Optical Transmittance DSP/SSP
    Dia50.8mm Sapphire Wafer Sapphir...
  • 50.8mm/100mm AlN Template on NPSS/FSS AlN template on sapphire
    50.8mm/100mm AlN Template on NPS...

Products

  • sapphire ball lens optical grade Al2O3 material Transmission range 0.15-5.5um Dia 1mm 1.5mm

    sapphire ball lens optical grade Al2O3 material Transmission range 0.15-5.5um Dia 1mm 1.5mm

  • sapphire ball Dia 1.0 1.1 1.5 for optical ball lens high hardness single crystal

    sapphire ball Dia 1.0 1.1 1.5 for optical ball lens high hardness single crystal

  • sapphire dia colored sapphire dia for watch,customizable dia 40 38mm thickness 350um 550um,high transparent

    sapphire dia colored sapphire dia for watch,customizable dia 40 38mm thickness 350um 550um,high transparent

  • InSb wafer 2inch 3inch undoped Ntype P type  orientation 111 100 for Infrared Detectors

    InSb wafer 2inch 3inch undoped Ntype P type orientation 111 100 for Infrared Detectors

  • Indium Antimonide (InSb) wafers N type P type Epi ready undoped Te doped or Ge doped 2inch 3inch 4inch thickness Indium Antimonide (InSb) wafers

    Indium Antimonide (InSb) wafers N type P type Epi ready undoped Te doped or Ge doped 2inch 3inch 4inch thickness Indium Antimonide (InSb) wafers

  • 2inch single wafer cassette wafer box material PP orPC  Used in wafer coin solutions 1inch 3inch 4inch  5inch 6inch 12inch are available

    2inch single wafer cassette wafer box material PP orPC Used in wafer coin solutions 1inch 3inch 4inch 5inch 6inch 12inch are available

  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C type 2inch 3inch 4inch 6inch 8inch

    SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C type 2inch 3inch 4inch 6inch 8inch

  • KY and EFG Sapphire Method Tube sapphire rods pipe high-pressure

    KY and EFG Sapphire Method Tube sapphire rods pipe high-pressure

  • sapphire ingot 3inch 4inch 6inch Monocrystal CZ KY method Customizable

    sapphire ingot 3inch 4inch 6inch Monocrystal CZ KY method Customizable

  • Sapphire blade for hair transplant 0.8mm 1.0mm 1.2mm High hardness wear resistance and corrosion resistance

    Sapphire blade for hair transplant 0.8mm 1.0mm 1.2mm High hardness wear resistance and corrosion resistance

  • Sapphire optical fiber Al2O3 single crystal transparent crystal cable Optical fiber communication line 25-500um

    Sapphire optical fiber Al2O3 single crystal transparent crystal cable Optical fiber communication line 25-500um

  • Sapphire tube high transparency 1inch 2inch 3inch custom glass tube length 10-800 mm 99.999% AL2O3 high purity

    Sapphire tube high transparency 1inch 2inch 3inch custom glass tube length 10-800 mm 99.999% AL2O3 high purity

<< < Previous 13141516171819 Next > >> Page 16 / 30

NEWS

  • Optical-Grade Silicon Carbide Waveguide AR Glasses: Preparation of High-Purity Semi-Insulating Substrates
    08/08/2025

    Optical-Grade Silicon Carbide Waveguide AR Glasses: Preparation of High-Purity Semi-Insulating Su...

  • Heteroepitaxial Growth of 3C-SiC on Silicon Substrates with Different Orientations
    08/08/2025

    Heteroepitaxial Growth of 3C-SiC on Silicon Substrates with Different Orientations

  • Silicon Carbide Ceramics vs. Semiconductor Silicon Carbide: The Same Material with Two Distinct Destinies
    30/07/2025

    Silicon Carbide Ceramics vs. Semiconductor Silicon Carbide: The Same Material with Two Distinct D...

  • Advances in High-Purity Silicon Carbide Ceramic Preparation Technologies
    30/07/2025

    Advances in High-Purity Silicon Carbide Ceramic Preparation Technologies

  • Technical Principles and Processes of LED Epitaxial Wafers
    25/07/2025

    Technical Principles and Processes of LED Epitaxial Wafers

CONTACT

  • Rm1-1805, No.851, Dianshanhu Road; Qingpu Area; Shanghai City, China//201799
  • +86 158 0194 2596
  • +86 187 0175 6522
  • eric@xkh-semitech.com
  • doris@xkh-semitech.com

INQUIRY

For inquiries about our products or pricelist, please leave your email to us and we will be in touch within 24 hours.

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