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Featured products

  • 8Inch 200mm 4H-N SiC Wafer Conductive dummy research grade
    8Inch 200mm 4H-N SiC Wafer Condu...
  • 150mm 6 inch 0.7mm 0.5mm Sapphire Wafer Substrate Carrier C-Plane SSP/DSP
    150mm 6 inch 0.7mm 0.5mm Sapphir...
  • 4 inch Sapphire Wafer C-Plane SSP/DSP 0.43mm 0.65mm
    4 inch Sapphire Wafer C-Plane SS...
  • Sapphire window Sapphire glass lens Single crystal Al2O3material
    Sapphire window Sapphire glass l...
  • Dia50.8mm Sapphire Wafer Sapphire Window High Optical Transmittance DSP/SSP
    Dia50.8mm Sapphire Wafer Sapphir...
  • 50.8mm/100mm AlN Template on NPSS/FSS AlN template on sapphire
    50.8mm/100mm AlN Template on NPS...

Products

  • InSb wafer 2inch 3inch undoped Ntype P type  orientation 111 100 for Infrared Detectors

    InSb wafer 2inch 3inch undoped Ntype P type orientation 111 100 for Infrared Detectors

  • Indium Antimonide (InSb) wafers N type P type Epi ready undoped Te doped or Ge doped 2inch 3inch 4inch thickness Indium Antimonide (InSb) wafers

    Indium Antimonide (InSb) wafers N type P type Epi ready undoped Te doped or Ge doped 2inch 3inch 4inch thickness Indium Antimonide (InSb) wafers

  • 2inch single wafer cassette wafer box material PP orPC  Used in wafer coin solutions 1inch 3inch 4inch  5inch 6inch 12inch are available

    2inch single wafer cassette wafer box material PP orPC Used in wafer coin solutions 1inch 3inch 4inch 5inch 6inch 12inch are available

  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C type 2inch 3inch 4inch 6inch 8inch

    SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C type 2inch 3inch 4inch 6inch 8inch

  • KY and EFG Sapphire Method Tube sapphire rods pipe high-pressure

    KY and EFG Sapphire Method Tube sapphire rods pipe high-pressure

  • sapphire ingot 3inch 4inch 6inch Monocrystal CZ KY method Customizable

    sapphire ingot 3inch 4inch 6inch Monocrystal CZ KY method Customizable

  • GaAs laser epitaxial wafer 4 inch 6 inch VCSEL vertical cavity surface emission laser wavelength 940nm single junction

    GaAs laser epitaxial wafer 4 inch 6 inch VCSEL vertical cavity surface emission laser wavelength 940nm single junction

  • InGaAs epitaxial wafer substrate PD Array photodetector arrays can be used for LiDAR

    InGaAs epitaxial wafer substrate PD Array photodetector arrays can be used for LiDAR

  • 2inch 3inch 4inch InP epitaxial wafer substrate APD light detector for fiber optic communications or LiDAR

    2inch 3inch 4inch InP epitaxial wafer substrate APD light detector for fiber optic communications or LiDAR

  • Sapphire hair transplant blade high hardness corrosion resistance medical tool customization can be used for medical beauty

    Sapphire hair transplant blade high hardness corrosion resistance medical tool customization can be used for medical beauty

  • Sapphire blade for hair transplant 0.8mm 1.0mm 1.2mm High hardness wear resistance and corrosion resistance

    Sapphire blade for hair transplant 0.8mm 1.0mm 1.2mm High hardness wear resistance and corrosion resistance

  • Sapphire optical fiber Al2O3 single crystal transparent crystal cable Optical fiber communication line 25-500um

    Sapphire optical fiber Al2O3 single crystal transparent crystal cable Optical fiber communication line 25-500um

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NEWS

  • Silicon Carbide Ceramics vs. Semiconductor Silicon Carbide: The Same Material with Two Distinct Destinies
    30/07/2025

    Silicon Carbide Ceramics vs. Semiconductor Silicon Carbide: The Same Material with Two Distinct D...

  • Advances in High-Purity Silicon Carbide Ceramic Preparation Technologies
    30/07/2025

    Advances in High-Purity Silicon Carbide Ceramic Preparation Technologies

  • Technical Principles and Processes of LED Epitaxial Wafers
    25/07/2025

    Technical Principles and Processes of LED Epitaxial Wafers

  • Key Considerations for High-Quality Silicon Carbide Single Crystal Preparation
    25/07/2025

    Key Considerations for High-Quality Silicon Carbide Single Crystal Preparation

  • Lithium Niobate on Insulator (LNOI): Driving the Advancement of Photonic Integrated Circuits
    18/07/2025

    Lithium Niobate on Insulator (LNOI): Driving the Advancement of Photonic Integrated Circuits

CONTACT

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  • +86 158 0194 2596
  • +86 187 0175 6522
  • eric@xkh-semitech.com
  • doris@xkh-semitech.com

INQUIRY

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