LiTaO3 Lithium Tantalate Ingots with Fe/Mg Doping Customized 4inch 6inch 8inch for Industrial Sensing

Short Description:

LiTaO3 Ingots (Lithium Tantalate Ingots), as core materials for third-generation wide-bandgap semiconductors and optoelectronics, leverage their high Curie temperature (607°C), broad transparency range (400–5,200 nm), excellent electromechanical coupling coefficient (Kt² >15%), and low dielectric loss (tanδ <2%) to revolutionize 5G communications, quantum computing, and photonic integration. Through advanced fabrication technologies such as physical vapor transport (PVT) and chemical vapor deposition (CVD), we provide X/Y/Z-cut, 42°Y-cut, and periodically poled (PPLT)ingots in 3–8-inch specifications, featuring micropipe density <0.1 cm⁻² and dislocation density <500 cm⁻². Our services include Fe/Mg doping, proton exchange waveguides, and silicon-based heterogeneous integration (POI), addressing high-performance optical filters, quantum light sources, and infrared detectors. This material drives breakthroughs in miniaturization, high-frequency operation, and thermal stability, accelerating domestic substitution and technological advancement.

Send email to us

Features

Technical parameters

Specification	Conventional	High Precision
Materials	LiTaO3(LT)/ LiNbO3 wafers	LiTaO3(LT)/LiNbO3 wafers
Orientation	X-112°Y,36°Y,42°Y±0.5°	X-112°Y,36°Y,42°Y±0.5°
Parallel	30″	10''
Perpendicular	10′	5'
surface Quality	40/20	20/10
Wavefront Distortion	λ/4@632nm	λ/8@632nm
Surface Flatness	λ/4@632nm	λ/8@632nm
Clear Aperture	>90%	>90%
Chamfer	<0.2×45°	<0.2×45°
Thickness/Diameter Tolerance	±0.1 mm	±0.1 mm
Maximum dimensions	dia150×50mm	dia150×50mm

XKH Services

1. Large-Scale Ingot Fabrication

Size and Cutting: 3–8-inch ingots with X/Y/Z-cut, 42°Y-cut, and custom angular cuts (±0.01° tolerance).

Doping Control: Fe/Mg co-doping via Czochralski method (concentration range 10¹⁶–10¹⁹ cm⁻³) to optimize photorefractive resistance and thermal stability.

2. Advanced Process Technologies

Heterogeneous Integration: Silicon-based LiTaO3 composite wafers (POI) with thickness control (300–600 nm) and thermal conductivity up to 8.78 W/m·K for high-frequency SAW filters.

Waveguide Fabrication: Proton exchange (PE) and reverse proton exchange (RPE) techniques, achieving submicron waveguides (Δn >0.7) for high-speed electro-optic modulators (bandwidth >40 GHz).

3. Quality Management Systems

End-to-End Testing: Raman spectroscopy (polytype verification), XRD (crystallinity), AFM (surface morphology), and optical uniformity testing (Δn <5×10⁻⁵).

4. Global Supply Chain Support

Production Capacity: Monthly output >5,000 ingots (8-inch: 70%), supporting 48-hour emergency delivery.

Logistics Network: Coverage in Europe, North America, and Asia-Pacific via air/sea freight with temperature-controlled packaging.

5. Technical Co-Development

Joint R&D Labs: Collaborate on photonic integration platforms (e.g., SiO2 low-loss layer bonding).

Summary

LiTaO3 Ingots serve as strategic materials reshaping optoelectronics and quantum technologies. Through innovations in crystal growth (e.g., PVT), defect mitigation, and heterogeneous integration (e.g., POI), we deliver high-reliability, cost-effective solutions for 5G/6G communications, quantum computing, and industrial IoT. XKH commitment to advancing ingot defect reduction and scaling 8-inch production ensures clients lead in global supply chains, driving the next era of wide-bandgap semiconductor ecosystems.