Device-Grade hBN Single Crystal | High-Quality Hexagonal Boron Nitride for 2D Materials
Detailed Diagram
Product Overview
Our Device-Grade hBN Single Crystal is a high-quality hexagonal boron nitride bulk single crystal designed for advanced 2D material research and device fabrication. Grown by a proprietary atmospheric-pressure process, this hBN crystal features high crystal quality, clean cleavage behavior, large-area single-domain regions and excellent optical transparency.
It is especially suitable as a substrate or encapsulation layer for 2D heterostructures, graphene-based devices, nanophotonic structures and deep-ultraviolet optoelectronic applications. Third-party device-level validation shows that this hBN material can deliver performance comparable to, or better than, current academic gold-standard crystals in graphene heterostructure applications.
Technical Specifications
- Device-grade hBN single crystal
- Proprietary atmospheric-pressure growth process
- Typical lateral crystal size ≥ 1 mm
- High dielectric breakdown field: 1.64 ± 0.06 V/nm
- Graphene room-temperature mobility on hBN: ~80,000 cm²/V·s
- hBN Raman E₂g FWHM: 7.88 cm⁻¹
- UV band-edge emission around 215 nm
- Suitable for 2D heterostructures, graphene devices, nanophotonics and deep-UV optoelectronics
Technical Specifications
| Item | Specification |
|---|---|
| Product Name | Device-Grade hBN Single Crystal |
| Material | Hexagonal Boron Nitride Single Crystal |
| Crystal Grade | Device Grade |
| Growth Process | Proprietary Atmospheric-Pressure Growth |
| Form | Bulk Single Crystal with Growth Facets |
| Typical Lateral Size | ≥ 1 mm |
| Packaging | Chip Carrier, 5–10 Crystals / Pack |
| Dielectric Breakdown Field | 1.64 ± 0.06 V/nm |
| Graphene Mobility on hBN | ~80,000 cm²/V·s at room temperature |
| hBN Raman E₂g FWHM | 7.88 cm⁻¹ |
| UV Band-Edge Emission | ~215 nm |
Product Advantages
Compared with ordinary commercial hBN crystals, this device-grade hBN is developed for applications where crystal quality, interfacial cleanliness and device performance are critical. The material has been benchmarked through third-party graphene heterostructure device testing and shows performance at or above the level of leading academic reference crystals.
The crystal dimensions shown in the datasheet indicate representative lateral sizes above 1 mm, with some measured crystal edges exceeding 1.4 mm. Optical microscope images also show clear growth facets, sharp cleavage edges, transparent crystal regions and large usable single-domain areas.
FAQ
Q1: What is this hBN single crystal mainly used for?
It is mainly used as a substrate or encapsulation layer for 2D heterostructures, graphene devices, nanophotonics and deep-UV optoelectronic research.
Q2: What is the typical crystal size?
The standard device-grade specification is ≥ 1 mm lateral size. Representative samples in the datasheet show measured dimensions above 1 mm, with some edges reaching over 1.4 mm.
Q3: Is this material suitable for graphene devices?
Yes. The datasheet reports typical graphene room-temperature mobility on hBN of approximately 80,000 cm²/V·s, making it suitable for high-mobility graphene device research.
Q4: What is the packaging format?
The product is typically supplied in a chip carrier, with 5–10 crystals per pack.
About Us
XKH specializes in high-tech development, production, and sales of special optical glass and new crystal materials. Our products serve optical electronics, consumer electronics, and the military. We offer Sapphire optical components, mobile phone lens covers, Ceramics, LT, Silicon Carbide SIC, Quartz, and semiconductor crystal wafers. With skilled expertise and cutting-edge equipment, we excel in non-standard product processing, aiming to be a leading optoelectronic materials high-tech enterprise.
