3C-SiC Cubic Silicon Carbide Wafer for MEMS, Photonics and Power Device

Short Description:

Perhaps we could start with a sample price of 80 yuan; later, when you place an order for 1,000 units, we can calculate the cost at 60 yuan and refund the difference between the initial sample price and the 60-yuan rate.

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Features

Detailed Diagram

Material Features

Cubic Crystal Structure

3C-SiC is the cubic polytype of silicon carbide. Its crystal structure is different from the hexagonal structures of 4H-SiC and 6H-SiC. Due to this special structure, 3C-SiC has unique advantages in epitaxial growth, interface properties, electronic performance and device research.

Good Electronic Properties

promisingelectronicproperties and is considered suitable for high-speed electronicdevices, high-frequencydevices and power device research.

Excellent Thermal Performance

3C-SiC has good thermal conductivity and can be used in applicationsrequiring high thermal stability and efficient heat dissipation, such as power devices, RF devices, optoelectronic devices and high-temperature sensors.

High Chemical Stability

3C-SiC has good resistance to corrosion, oxidation and harsh chemical environments. It is suitable for harsh-environment sensors, high-temperature MEMS devices and special industrialapplications.

Good Mechanical Strength

3C-SiC has high hardness, high mechanical strength and good wear resistance. It can be used for micro-mechanical structures, pressure sensors, resonators, cantilever structures and thin-film mechanicaldevices.

Compatible with Silicon-Based Processes

3C-SiC can be grown on silicon substrates to form 3C-SiC on Si wafers. This structure helps reduce cost and improves compatibility with mature silicon-based semiconductor processes, making it attractive for MEMS, sensors and CMOS-compatible research.

Material Features

3C-SiC Substrate

3C-SiC substrates are suitable for material research, power device development, epitaxial growth, thermal management and new wide-bandgap semiconductor device research.

Available options include:

N-type 3C-SiC substrate
High-resistivity 3C-SiC substrate
Semi-insulating 3C-SiC substrate
Single-side polished 3C-SiC wafer
Double-side polished 3C-SiC wafer
Customized size, thickness, orientation and resistivity

3C-SiC on Si Wafer

3C-SiC on Si refers to a 3C-SiC film grown on a silicon substrate. This product combines the cost advantage of Si substrates with the excellent properties of 3C-SiC, and is suitable for MEMS, sensors, thin-film devices and silicon-based integration research.

Common structures include:

3C-SiC / Si
3C-SiC / SiO₂ / Si
3C-SiC thin film on Si substrate
Customized buffer layer structure
Customized epitaxial thickness structure

3C-SiC Thin Film

3C-SiC thin films can be used for micro/nano fabrication, etching research, sensor structures, photonic platforms, waveguide devices and thin-film mechanical testing.

Different thicknesses, orientations, surface roughness levels and substrate structures can be customized according to customer requirements.

Customized Epitaxial Structure

Customized 3C-SiC epitaxial structures can be provided according to customer R&D requirements, including different substrates, film thicknesses, doping types, resistivity ranges and surface processing requirements.

Typical Specifications

Item	Available Options
Material	3C-SiC / β-SiC / Cubic SiC
Crystal Structure	Cubic
Product Type	3C-SiC substrate, 3C-SiC on Si, 3C-SiC thin film, customized epi wafer
Wafer Size	2 inch, 4 inch, 6 inch or customized
Orientation	<100>, <111> or customized
Conductivity Type	N-type, high-resistivity, semi-insulating or customized
Substrate Material	Si, SiC or other customized substrates
Epitaxial Thickness	Customized according to requirements
Wafer Thickness	Customized according to drawings or specifications
Surface Treatment	SSP / DSP
Surface Roughness	Controlled according to customer requirements
Testing Items	Thickness, resistivity, TTV, bow, warp, surface defects, orientation, etc.
Packaging	Single wafer box, wafer cassette, vacuum packaging, clean packaging

Main Applications

MEMS Devices

High-temperature MEMS
Pressure sensors
Gas sensors
Acceleration sensors
Resonators
Cantilever structures
Micro-mechanical thin-film structures

Optoelectronic and Photonic Devices

UV detectors
LED research
Optical waveguides
Integrated photonic platforms
Quantum photonic devices
Photonic crystal structures

Epitaxy and Material Research

SiC epitaxial growth research
3C-SiC defect research
Lattice mismatch research
Thin-film stress research
Heteroepitaxial structure research
Wide-bandgap material research

Difference Between 3C-SiC, 4H-SiC and 6H-SiC

4H-SiC and 6H-SiC are common silicon carbide polytypes, and 4H-SiC is widely used in commercial power devices. In comparison, 3C-SiC has a cubic crystal structure and shows unique advantages in electron mobility, silicon-based epitaxial growth, MEMS devices, sensors and thin-film device research.

In simple terms:

4H-SiC is more commonly used for mature power devices;
6H-SiC is used in some optoelectronic, substrate and special applications;
3C-SiC is more suitable for MEMS, Si-based epitaxy, sensors, thin-film devices, photonic devices and new power device research.

Therefore, 3C-SiC is not simply a replacement for 4H-SiC. The selection depends on the device structure, process route and research purpose.

FAQ

1. What is 3C-SiC?

3C-SiC, also known as cubic silicon carbide or β-SiC, is a polytype of silicon carbide with a cubic crystal structure. It offers excellent thermal stability, chemical resistance, mechanical strength and semiconductor properties.

2. What is the difference between 3C-SiC and 4H-SiC?

3C-SiC has a cubic crystal structure, while 4H-SiC has a hexagonal crystal structure. 4H-SiC is widely used in commercial power devices, while 3C-SiC is commonly used for MEMS, sensors, Si-based epitaxy, thin-film devices, photonics and material research.

3. What types of 3C-SiC products can you provide?

We can provide 3C-SiC substrates, 3C-SiC on Si wafers, 3C-SiC thin films and customized 3C-SiC epitaxial structures according to customer requirements.

About Us

XKH specializes in high-tech development, production, and sales of special optical glass and new crystal materials. Our products serve optical electronics, consumer electronics, and the military. We offer Sapphire optical components, mobile phone lens covers, Ceramics, LT, Silicon Carbide SIC, Quartz, and semiconductor crystal wafers. With skilled expertise and cutting-edge equipment, we excel in non-standard product processing, aiming to be a leading optoelectronic materials high-tech enterprise.