12 inch SiC Substrate N Type Large Size High Performance RF Applications

Short Description:

The 12-inch SiC substrate represents a groundbreaking advancement in semiconductor materials technology, offering transformative benefits for power electronics and high-frequency applications. As the industry’s largest commercially available silicon carbide wafer format, the 12-inch SiC substrate enables unprecedented economies of scale while maintaining the material’s inherent advantages of wide bandgap characteristics and exceptional thermal properties. Compared to conventional 6-inch or smaller SiC wafers, the 12-inch platform delivers over 300% more usable area per wafer, dramatically increasing die yield and reducing manufacturing costs for power devices. This size transition mirrors the historical evolution of silicon wafers, where each diameter increase brought significant cost reductions and performance improvements. The 12-inch SiC substrate’s superior thermal conductivity (nearly 3× that of silicon) and high critical breakdown field strength make it particularly valuable for next-generation 800V electric vehicle systems, where it enables more compact and efficient power modules. In 5G infrastructure, the material’s high electron saturation velocity allows RF devices to operate at higher frequencies with lower losses. The substrate’s compatibility with modified silicon manufacturing equipment also facilitates smoother adoption by existing fabs, though specialized handling is required due to SiC’s extreme hardness (9.5 Mohs). As production volumes increase, the 12-inch SiC substrate is expected to become the industry standard for high-power applications, driving innovation across automotive, renewable energy, and industrial power conversion systems.

Send email to us

Product Detail

Product Tags

Technical parameters

12 inch Silicon Carbide (SiC) Substrate Specification
Grade		ZeroMPD Production Grade(Z Grade)	Standard Production Grade(P Grade)		Dummy Grade (D Grade)
Diameter		3 0 0 mm~1305mm
Thickness	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Wafer Orientation		Off axis : 4.0° toward <1120 >±0.5° for 4H-N, On axis : <0001>±0.5° for 4H-SI
Micropipe Density	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Resistivity	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Primary Flat Orientation		{10-10} ±5.0°
Primary Flat Length	4H-N	N/A
	4H-SI	Notch
Edge Exclusion		3 mm
LTV/TTV/Bow /Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Roughness		Polish Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Edge Cracks By High Intensity Light Hex Plates By High Intensity Light Polytype Areas By High Intensity Light Visual Carbon Inclusions Silicon Surface Scratches By High Intensity Light		None Cumulative area ≤0.05% None Cumulative area ≤0.05% None			Cumulative length ≤ 20 mm, single length≤2 mm Cumulative area ≤0.1% Cumulative area≤3% Cumulative area ≤3% Cumulative length≤1×wafer diameter
Edge Chips By High Intensity Light		None permitted ≥0.2mm width and depth			7 allowed, ≤1 mm each
(TSD) Threading screw dislocation		≤500 cm-2		N/A
(BPD) Base plane dislocation		≤1000 cm-2		N/A
Silicon Surface Contamination By High Intensity Light		None
Packaging		Multi-wafer Cassette Or Single Wafer Container
Notes:
1 Defects limits apply to entire wafer surface except for the edge exclusion area. 2The scratches should be checked on Si face only. 3 The dislocation data is only from KOH etched wafers.

Key Features

1. Large Size Advantage: The 12-inch SiC substrate (12-inch silicon carbide substrate) offers a larger single-wafer area, enabling more chips to be produced per wafer, thereby reducing manufacturing costs and increasing yield.
2. High-Performance Material: Silicon carbide’s high-temperature resistance and high breakdown field strength make the 12-inch substrate ideal for high-voltage and high-frequency applications, such as EV inverters and fast-charging systems.
3. Processing Compatibility: Despite the high hardness and processing challenges of SiC, the 12-inch SiC substrate achieves lower surface defects through optimized cutting and polishing techniques, improving device yield.
4. Superior Thermal Management: With better thermal conductivity than silicon-based materials, the 12-inch substrate effectively addresses heat dissipation in high-power devices, extending equipment lifespan.

Main Applications

1. Electric Vehicles: The 12-inch SiC substrate (12-inch silicon carbide substrate) is a core component of next-generation electric drive systems, enabling high-efficiency inverters that enhance range and reduce charging time.

2. 5G Base Stations: Large-size SiC substrates support high-frequency RF devices, meeting the demands of 5G base stations for high power and low loss.

3.Industrial Power Supplies: In solar inverters and smart grids, the 12-inch substrate can withstand higher voltages while minimizing energy loss.

4.Consumer Electronics: Future fast chargers and data center power supplies may adopt 12-inch SiC substrates to achieve compact size and higher efficiency.

XKH's Services

We specialize in customized processing services for 12-inch SiC substrates (12-inch silicon carbide substrates), including:
1. Dicing & Polishing: Low-damage, high-flatness substrate processing tailored to customer requirements, ensuring stable device performance.
2. Epitaxial Growth Support: High-quality epitaxial wafer services to accelerate chip manufacturing.
3. Small-Batch Prototyping: Supports R&D validation for research institutions and enterprises, shortening development cycles.
4. Technical Consulting: End-to-end solutions from material selection to process optimization, helping customers overcome SiC processing challenges.
Whether for mass production or specialized customization, our 12-inch SiC substrate services align with your project needs, empowering technological advancements.