Products
-
Indium Antimonide (InSb) wafers N type P type Epi ready undoped Te doped or Ge doped 2inch 3inch 4inch thickness Indium Antimonide (InSb) wafers
-
2inch single wafer cassette wafer box material PP orPC Used in wafer coin solutions 1inch 3inch 4inch 5inch 6inch 12inch are available
-
SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C type 2inch 3inch 4inch 6inch 8inch
-
KY and EFG Sapphire Method Tube sapphire rods pipe high-pressure
-
sapphire ingot 3inch 4inch 6inch Monocrystal CZ KY method Customizable
-
Sapphire tube high transparency 1inch 2inch 3inch custom glass tube length 10-800 mm 99.999% AL2O3 high purity
-
sapphire ring made of synthetic sapphire material Transparent and customizable Mohs hardness of 9
-
Sapphire tube precision manufacturing transparent tube Al2O3 crystal wear-resistant high hardness EFG/KY various diameter polishing custom
-
2 inch Sic silicon carbide substrate 6H-N Type 0.33mm 0.43mm double-sided polishing High thermal conductivity low power consumption
-
GaAs high-power epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm for laser medical treatment
-
GaAs laser epitaxial wafer 4 inch 6 inch VCSEL vertical cavity surface emission laser wavelength 940nm single junction
-
InGaAs epitaxial wafer substrate PD Array photodetector arrays can be used for LiDAR