Products
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sapphire tube CZmethod KY method High Temperature Resistance Al2O3 99.999% single crystal sapphire
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p-type 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Zero MPD
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SiC substrate P-type 4H/6H-P 3C-N 4inch withe thickness of 350um Production grade Dummy grade
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4H/6H-P 6inch SiC wafer Zero MPD grade Production Grade Dummy Grade
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P-type SiC wafer 4H/6H-P 3C-N 6inch thickeness 350 μm with Primary Flat Orientation
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Alumina ceramic arm custom Ceramic robotic arm
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Al2O3 99.999% sapphire custom blade transparent wear resistant 38×4.5×0.3mmt
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Al2O3 99.999% sapphire custom blade transparent wear resistant 38×4.5×0.3mmt
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Lilac YAG raw material powder purple in stock
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TVG process on quartz sapphire BF33 wafer Glass wafer punching
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Single Crystal Silicon Wafer Si Substrate Type N/P Optional Silicon Carbide Wafer
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N-Type SiC Composite Substrates Dia6inch High quality monocrystaline and low quality substrate