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Featured products

  • 8Inch 200mm 4H-N SiC Wafer Conductive dummy research grade
    8Inch 200mm 4H-N SiC Wafer Condu...
  • 150mm 6 inch 0.7mm 0.5mm Sapphire Wafer Substrate Carrier C-Plane SSP/DSP
    150mm 6 inch 0.7mm 0.5mm Sapphir...
  • 4 inch Sapphire Wafer C-Plane SSP/DSP 0.43mm 0.65mm
    4 inch Sapphire Wafer C-Plane SS...
  • Sapphire window Sapphire glass lens Single crystal Al2O3material
    Sapphire window Sapphire glass l...
  • Dia50.8mm Sapphire Wafer Sapphire Window High Optical Transmittance DSP/SSP
    Dia50.8mm Sapphire Wafer Sapphir...
  • 50.8mm/100mm AlN Template on NPSS/FSS AlN template on sapphire
    50.8mm/100mm AlN Template on NPS...

Products

  • SiC crystal growth furnace SiC Ingot growing 4inch 6inch 8inch PTV Lely TSSG LPE growth method

    SiC crystal growth furnace SiC Ingot growing 4inch 6inch 8inch PTV Lely TSSG LPE growth method

  • Silicon carbide ceramic tray sucker Silicon carbide ceramic tube supply high temperature sintering custom processing

    Silicon carbide ceramic tray sucker Silicon carbide ceramic tube supply high temperature sintering custom processing

  • High strength silicon carbide ceramic tube SIC different types customized fire resistance

    High strength silicon carbide ceramic tube SIC different types customized fire resistance

  • SiC ceramic chuck tray Ceramic suction cups precision machining customized

    SiC ceramic chuck tray Ceramic suction cups precision machining customized

  • Sapphire fiber diameter 75-500μm LHPG method can be used for sapphire fiber high temperature sensor

    Sapphire fiber diameter 75-500μm LHPG method can be used for sapphire fiber high temperature sensor

  • Sapphire fiber single crystal Al₂O₃ high optical transmittance melting point 2072℃ can be used for laser window materials

    Sapphire fiber single crystal Al₂O₃ high optical transmittance melting point 2072℃ can be used for laser window materials

  • Patterned Sapphire Substrate PSS 2inch 4inch 6inch ICP dry etching can be used for LED chips

    Patterned Sapphire Substrate PSS 2inch 4inch 6inch ICP dry etching can be used for LED chips

  • Small table laser punching machine 1000W-6000W minimum aperture 0.1MM can be used for metal glass ceramic materials

    Small table laser punching machine 1000W-6000W minimum aperture 0.1MM can be used for metal glass ceramic materials

  • Sapphire thermocouple protection tube products industrial use Single crystal Al2O3

    Sapphire thermocouple protection tube products industrial use Single crystal Al2O3

  • High precision laser drilling machine for sapphire ceramic material gem bearing nozzle drilling

    High precision laser drilling machine for sapphire ceramic material gem bearing nozzle drilling

  • Sapphire single crystal Al2O3 growth furnace KY method Kyropoulos production of high quality sapphire crystal

    Sapphire single crystal Al2O3 growth furnace KY method Kyropoulos production of high quality sapphire crystal

  • 2 inch 4 inch 6 inch Patterned Sapphire Substrate (PSS) on which GaN material is grown can use for LED lighting

    2 inch 4 inch 6 inch Patterned Sapphire Substrate (PSS) on which GaN material is grown can use for LED lighting

<< < Previous 9101112131415 Next > >> Page 12 / 30

NEWS

  • Optical-Grade Silicon Carbide Waveguide AR Glasses: Preparation of High-Purity Semi-Insulating Substrates
    08/08/2025

    Optical-Grade Silicon Carbide Waveguide AR Glasses: Preparation of High-Purity Semi-Insulating Su...

  • Heteroepitaxial Growth of 3C-SiC on Silicon Substrates with Different Orientations
    08/08/2025

    Heteroepitaxial Growth of 3C-SiC on Silicon Substrates with Different Orientations

  • Silicon Carbide Ceramics vs. Semiconductor Silicon Carbide: The Same Material with Two Distinct Destinies
    30/07/2025

    Silicon Carbide Ceramics vs. Semiconductor Silicon Carbide: The Same Material with Two Distinct D...

  • Advances in High-Purity Silicon Carbide Ceramic Preparation Technologies
    30/07/2025

    Advances in High-Purity Silicon Carbide Ceramic Preparation Technologies

  • Technical Principles and Processes of LED Epitaxial Wafers
    25/07/2025

    Technical Principles and Processes of LED Epitaxial Wafers

CONTACT

  • Rm1-1805, No.851, Dianshanhu Road; Qingpu Area; Shanghai City, China//201799
  • +86 158 0194 2596
  • +86 187 0175 6522
  • eric@xkh-semitech.com
  • doris@xkh-semitech.com

INQUIRY

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