Products
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SiC ceramic chuck tray Ceramic suction cups precision machining customized
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Sapphire fiber diameter 75-500μm LHPG method can be used for sapphire fiber high temperature sensor
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Sapphire fiber single crystal Al₂O₃ high optical transmittance melting point 2072℃ can be used for laser window materials
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Patterned Sapphire Substrate PSS 2inch 4inch 6inch ICP dry etching can be used for LED chips
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Small table laser punching machine 1000W-6000W minimum aperture 0.1MM can be used for metal glass ceramic materials
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Sapphire thermocouple protection tube products industrial use Single crystal Al2O3
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High precision laser drilling machine for sapphire ceramic material gem bearing nozzle drilling
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Sapphire single crystal Al2O3 growth furnace KY method Kyropoulos production of high quality sapphire crystal
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2 inch 4 inch 6 inch Patterned Sapphire Substrate (PSS) on which GaN material is grown can use for LED lighting
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4H-N/6H-N SiC Wafer Reasearch production Dummy grade Dia150mm Silicon carbide substrate
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Monocrystalline silicon growth furnace monocrystalline silicon ingot growth system equipment temperature up to 2100℃
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Sapphire crystal growth furnace Czochralski single crystal furnace CZ method to grow high-quality sapphire wafer