SiC Ingot Growth Furnace for Large-Diameter SiC Crystal TSSG/LPE Methods

Short Description:

XKH’s liquid-phase silicon carbide ingot growth furnace employs world-leading TSSG (Top-Seeded Solution Growth) and LPE (Liquid Phase Epitaxy) technologies, specifically designed for high-quality SiC single crystal growth. The TSSG method enables growth of 4-8 inch large-diameter 4H/6H-SiC ingots through precise temperature gradient and seed lifting speed control, while the LPE method facilitates controlled growth of SiC epitaxial layers at lower temperatures, particularly suitable for ultra-low defect thick epitaxial layers. This liquid-phase silicon carbide ingot growth system has been successfully applied in industrial production of various SiC crystals including 4H/6H-N type and 4H/6H-SEMI insulating type, providing complete solutions from equipment to processes.

Send email to us

Features

Working Principle

The core principle of liquid-phase silicon carbide ingot growth involves dissolving high-purity SiC raw materials in molten metals (e.g., Si, Cr) at 1800-2100°C to form saturated solutions, followed by controlled directional growth of SiC single crystals on seed crystals through precise temperature gradient and supersaturation regulation. This technology is particularly suitable for producing high-purity (>99.9995%) 4H/6H-SiC single crystals with low defect density (<100/cm²), meeting stringent substrate requirements for power electronics and RF devices. The liquid-phase growth system enables precise control of crystal conductivity type (N/P type) and resistivity through optimized solution composition and growth parameters.

Core Components

1. Special Crucible System: High-purity graphite/tantalum composite crucible, temperature resistance >2200°C, resistant to SiC melt corrosion.

2. Multi-zone Heating System: Combined resistance/induction heating with temperature control accuracy of ±0.5°C (1800-2100°C range).

3. Precision Motion System: Dual closed-loop control for seed rotation (0-50rpm) and lifting (0.1-10mm/h).

4. Atmosphere Control System: High-purity argon/nitrogen protection, adjustable working pressure (0.1-1atm).

5. Intelligent Control System: PLC+industrial PC redundant control with real-time growth interface monitoring.

6. Efficient Cooling System: Graded water cooling design ensures long-term stable operation.

TSSG vs. LPE Comparison

Characteristics	TSSG Method	LPE Method
Growth Temp	2000-2100°C	1500-1800°C
Growth Rate	0.2-1mm/h	5-50μm/h
Crystal Size	4-8 inch ingots	50-500μm epi-layers
Main Application	Substrate preparation	Power device epi-layers
Defect Density	<500/cm²	<100/cm²
Suitable Polytypes	4H/6H-SiC	4H/3C-SiC

Key Applications

1. Power Electronics: 6-inch 4H-SiC substrates for 1200V+ MOSFETs/diodes.

2. 5G RF Devices: Semi-insulating SiC substrates for base station PAs.

3. EV Applications: Ultra-thick (>200μm) epi-layers for automotive-grade modules.

4. PV Inverters: Low-defect substrates enabling >99% conversion efficiency.

Core Advantages

1. Technological Superiority
1.1 Integrated Multi-Method Design
This liquid-phase SiC ingot growth system innovatively combines TSSG and LPE crystal growth technologies. The TSSG system employs top-seeded solution growth with precise melt convection and temperature gradient control (ΔT≤5℃/cm), enabling stable growth of 4-8 inch large-diameter SiC ingots with single-run yields of 15-20kg for 6H/4H-SiC crystals. The LPE system utilizes optimized solvent composition (Si-Cr alloy system) and supersaturation control (±1%) to grow high-quality thick epitaxial layers with defect density <100/cm² at relatively low temperatures (1500-1800℃).

1.2 Intelligent Control System
Equipped with 4th-generation smart growth control featuring:
• Multi-spectral in-situ monitoring (400-2500nm wavelength range)
• Laser-based melt level detection (±0.01mm precision)
• CCD-based diameter closed-loop control (<±1mm fluctuation)
• AI-powered growth parameter optimization (15% energy saving)

2. Process Performance Advantages
2.1 TSSG Method Core Strengths
• Large-size capability: Supports up to 8-inch crystal growth with >99.5% diameter uniformity
• Superior crystallinity: Dislocation density <500/cm², micropipe density <5/cm²
• Doping uniformity: <8% n-type resistivity variation (4-inch wafers)
• Optimized growth rate: Adjustable 0.3-1.2mm/h, 3-5× faster than vapor-phase methods

2.2 LPE Method Core Strengths
• Ultra-low defect epitaxy: Interface state density <1×10¹¹cm⁻²·eV⁻¹
• Precise thickness control: 50-500μm epi-layers with <±2% thickness variation
• Low-temperature efficiency: 300-500℃ lower than CVD processes
• Complex structure growth: Supports p-n junctions, superlattices, etc.

3. Production Efficiency Advantages
3.1 Cost Control
• 85% raw material utilization (vs. 60% conventional)
• 40% lower energy consumption (compared to HVPE)
• 90% equipment uptime (modular design minimizes downtime)

3.2 Quality Assurance
• 6σ process control (CPK>1.67)
• Online defect detection (0.1μm resolution)
• Full-process data traceability (2000+ real-time parameters)

3.3 Scalability
• Compatible with 4H/6H/3C polytypes
• Upgradeable to 12-inch process modules
• Supports SiC/GaN hetero-integration

4. Industry Application Advantages
4.1 Power Devices
• Low-resistivity substrates (0.015-0.025Ω·cm) for 1200-3300V devices
• Semi-insulating substrates (>10⁸Ω·cm) for RF applications

4.2 Emerging Technologies
• Quantum communication: Ultra-low noise substrates (1/f noise<-120dB)
• Extreme environments: Radiation-resistant crystals (<5% degradation after 1×10¹⁶n/cm² irradiation)

XKH Services

1. Customized Equipment: Tailored TSSG/LPE system configurations.
2. Process Training: Comprehensive technical training programs.
3. After-sales Support: 24/7 technical response and maintenance.
4. Turnkey Solutions: Full-spectrum service from installation to process validation.
5. Material Supply: 2-12 inch SiC substrates/epi-wafers available.

Key advantages include:
• Up to 8-inch crystal growth capability.
• Resistivity uniformity <0.5%.
• Equipment uptime >95%.
• 24/7 technical support.