Products
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GaAs high-power epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm for laser medical treatment
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GaAs laser epitaxial wafer 4 inch 6 inch VCSEL vertical cavity surface emission laser wavelength 940nm single junction
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InGaAs epitaxial wafer substrate PD Array photodetector arrays can be used for LiDAR
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2inch 3inch 4inch InP epitaxial wafer substrate APD light detector for fiber optic communications or LiDAR
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Sapphire Prism Sapphire Lens High transparency Al2O3 BK7 JGS1 JGS2 Material Optical Instrument
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Sapphire ingot dia 4inch× 80mm Monocrystalline Al2O3 99.999% Single Crystal
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sapphire ring all-sapphire ring entirely crafted from sapphire Transparent lab-made sapphire material
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SiC substrate 3inch 350um thickness HPSI type Prime Grade Dummy grade
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Silicon Carbide SiC Ingot 6inch N type Dummy/prime grade thickness can ba customized
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6 in Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
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SiC Ingot 4H type Dia 4inch 6inch Thickness 5-10mm Research / Dummy Grade
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6inch sapphire Boule sapphire blank single crystal Al2O3 99.999%