Products
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Wafer Thinning Equipment for 4 Inch-12 Inch Sapphire/SiC/Si Wafers Processing
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12 Inch SiC substrate Diameter 300mm Thickness 750μm 4H-N Type can be customized
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Customized SiC Seed Crystal Substrates Dia 205/203/208 4H-N Type for Optical Communications
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Custom-Shaped Sapphire Optical Windows Single Crystal Al₂O₃ Wear Resistant Bespoke Dimensions Or Shape
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Infrared Nanosecond Laser Drilling equipment for Glass Drilling thickness≤20mm
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Microjet laser technology equipment wafer cutting SiC material processing
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Silicon carbide diamond wire cutting machine 4/6/8/12 inch SiC ingot processing
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Silicon carbide resistance long crystal furnace growing 6/8/12inch inch SiC ingot crystal PVT method
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Double station square machine monocrystalline silicon rod processing 6/8/12 inch surface flatness Ra≤0.5μm
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Ruby optical window High transmittance Mohs Hardness 9 laser mirror protection window
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Bionic non-slip pad wafer carrying vacuum sucker friction pad sucker
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Coated silicon lens monocrystalline silicon custom coated AR anti-reflection film