LiTaO3 Wafer 2inch-8inch 10x10x0.5 mm 1sp 2sp for 5G/6G Communications

Short Description:

LiTaO3 Wafer (lithium tantalate wafer), a pivotal material in third-generation semiconductors and optoelectronics, leverages its high Curie temperature (610°C), broad transparency range (0.4–5.0 μm), superior piezoelectric coefficient (d33 > 1,500 pC/N), and low dielectric loss (tanδ < 2%)to revolutionize 5G communications, photonic integration, and quantum devices. Utilizing advanced fabrication technologies such as physical vapor transport (PVT) and chemical vapor deposition (CVD), XKH provide X/Y/Z-cut, 42°Y-cut, and periodically poled (PPLT)wafers in 2–8-inch formats, featuring surface roughness (Ra) <0.5 nm and micropipe density <0.1 cm⁻². Our services encompass Fe doping, chemical reduction, and Smart-Cut heterogeneous integration, addressing high-performance optical filters, infrared detectors, and quantum light sources. This material drives breakthroughs in miniaturization, high-frequency operation, and thermal stability, accelerating domestic substitution in critical technologies.

Send email to us

Features

Technical parameters

Name	Optical-grade LiTaO3	Sound table level LiTaO3
Axial	Z cut + / - 0.2 °	36 ° Y cut / 42 ° Y cut / X cut (+ / - 0.2 °)
Diameter	76.2mm + / - 0.3mm/ 100±0.2mm	76.2mm + /-0.3mm 100mm + /-0.3mm 0r 150±0.5mm
Datum plane	22mm + / - 2mm	22mm + /-2mm 32mm + /-2mm
Thickness	500um + /-5mm 1000um + /-5mm	500um + /-20mm 350um + /-20mm
TTV	≤ 10um	≤ 10um
Curie temperature	605 °C + / - 0.7 °C (DTAmethod)	605 °C + / -3 °C (DTAmethod
Surface quality	Double-sided polishing	Double-sided polishing
Chamfered edges	edge rounding	edge rounding

Key Characteristics

1.Electrical and Optical Performance
· Electro-Optic Coefficient: r33 reaches 30 pm/V (X-cut), 1.5× higher than LiNbO3, enabling ultra-wideband electro-optic modulation (>40 GHz bandwidth).
· Broad Spectral Response: Transmission range 0.4–5.0 μm (8 mm thickness), with ultraviolet absorption edge as low as 280 nm, ideal for UV lasers and quantum dot devices.
· Low Pyroelectric Coefficient: dP/dT = 3.5×10⁻⁴ C/(m²·K), ensuring stability in high-temperature infrared sensors.

2.Thermal and Mechanical Properties
· High Thermal Conductivity: 4.6 W/m·K (X-cut), quadruple that of quartz, sustaining -200–500°C thermal cycling.
· Low Thermal Expansion Coefficient: CTE = 4.1×10⁻⁶/K (25–1000°C), compatible with silicon packaging to minimize thermal stress.
3.Defect Control and Processing Precision
· Micropipe Density: <0.1 cm⁻² (8-inch wafers), dislocation density <500 cm⁻² (verified via KOH etching).
· Surface Quality: CMP-polished to Ra <0.5 nm, meeting EUV lithography-grade flatness requirements.

Key Applications

Domain	Application Scenarios	Technical Advantages
Optical Communications	100G/400G DWDM lasers, silicon photonics hybrid modules	LiTaO3 wafer’s broad spectral transmission and low waveguide loss (α <0.1 dB/cm) enable C-band expansion.
5G/6G Communications	SAW filters (1.8–3.5 GHz), BAW-SMR filters	42°Y-cut wafers achieve Kt² >15%, delivering low insertion loss (<1.5 dB) and high roll-off (>30 dB).
Quantum Technologies	Single-photon detectors, parametric down-conversion sources	High nonlinear coefficient (χ(2)=40 pm/V) and low dark count rate (<100 counts/s) enhance quantum fidelity.
Industrial Sensing	High-temperature pressure sensors, current transformers	LiTaO3 wafer’s piezoelectric response (g33 >20 mV/m) and high-temperature tolerance (>400°C) suit extreme environments.

XKH Services

1.Custom Wafer Fabrication

· Size and Cutting: 2–8-inch wafers with X/Y/Z-cut, 42°Y-cut, and custom angular cuts (±0.01° tolerance).

· Doping Control: Fe, Mg doping via Czochralski method (concentration range 10¹⁶–10¹⁹ cm⁻³) to optimize electro-optic coefficients and thermal stability.

2.Advanced Process Technologies

· Periodic Poling (PPLT): Smart-Cut technology for LTOI wafers, achieving ±10 nm domain period precision and quasi-phase-matched (QPM) frequency conversion.

· Heterogeneous Integration: Si-based LiTaO3 composite wafers (POI) with thickness control (300–600 nm) and thermal conductivity up to 8.78 W/m·K for high-frequency SAW filters.

3.Quality Management Systems

· End-to-End Testing: Raman spectroscopy (polytype verification), XRD (crystallinity), AFM (surface morphology), and optical uniformity testing (Δn <5×10⁻⁵).

4.Global Supply Chain Support

· Production Capacity: Monthly output >5,000 wafers (8-inch: 70%), with 48-hour emergency delivery.

· Logistics Network: Coverage in Europe, North America, and Asia-Pacific via air/sea freight with temperature-controlled packaging.