LiNbO₃ Wafers 2inch-8inch Thickness 0.1 ~ 0.5mm TTV 3µm Custom

Short Description:

LiNbO₃ Wafers represent the gold standard in integrated photonics and precision acoustics, delivering unparalleled performance in modern optoelectronic systems. As a leading manufacturer, we’ve perfected the art of producing these engineered substrates through advanced vapor transport equilibration techniques, achieving industry-leading crystalline perfection with defect densities below 50/cm².

XKH production capabilities span diameters from 75mm to 150mm, with precise orientation control (X/Y/Z-cut ±0.3°) and specialized doping options including rare-earth elements. The unique combination of properties in LiNbO₃ Wafers – including their remarkable r₃₃ coefficient (32±2 pm/V) and broad transparency from near-UV to mid-IR – makes them indispensable for next-generation photonic circuits and high-frequency acoustic devices.

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Features

Technical parameters

Material	Optical Grade LiNbO3 wafes
Curie Temp	1142±2.0℃
Cutting Angle	X/Y/Z etc
Diameter/size	2"/3"/4"/6"/8"
Tol(±)	<0.20 mm
Thickness	0.1 ~ 0.5mm or more
Primary Flat	16mm/22mm /32mm
TTV	<3µm
Bow	-30<bow<30
Warp	<40µm
Orientation Flat	All available
Surface Type	Single Side Polished /Double Sides Polished
Polished side Ra	<0.5nm
S/D	20/10
Edge Criteria	R=0.2mm or Bullnose
Optical doped	Fe/Zn/MgO etc for optical grade LN< wafers
Wafer Surface Criteria	Refractive index	No=2.2878/Ne=2.2033 @632nm wavelength
	Contamination,	None
	Particles ￠>0.3 µ m	<= 30
	Scratch , Chipping	None
	Defect	No edge cracks, scratches, saw marks, stains
Packaging	Qty/Wafer box	25pcs per box

Core Attributes of Our LiNbO₃ Wafers

1.Photonic Performance Characteristics

Our LiNbO₃ Wafers exhibit extraordinary light-matter interaction capabilities, with nonlinear optical coefficients reaching 42 pm/V - enabling efficient wavelength conversion processes critical for quantum photonics. The substrates maintain >72% transmission across 320-5200nm, with specially engineered versions achieving <0.2dB/cm propagation loss at telecom wavelengths.

2.Acoustic Wave Engineering

The crystalline structure of our LiNbO₃ Wafers supports surface wave velocities exceeding 3800 m/s, permitting resonator operation up to 12GHz. Our proprietary polishing techniques yield surface acoustic wave (SAW) devices with insertion losses under 1.2dB, while maintaining temperature stability within ±15ppm/°C.

3.Environmental Resilience

Engineered to withstand extreme conditions, our LiNbO₃ Wafers maintain functionality from cryogenic temperatures to 500°C operational environments. The material demonstrates exceptional radiation hardness, withstanding >1Mrad total ionizing dose without significant performance degradation.

4.Application-Specific Configurations

We offer domain-engineered variants including:
Periodically poled structures with 5-50μm domain periods
Ion-sliced thin films for hybrid integration
Metamaterial-enhanced versions for specialized applications

Implementation Scenarios for LiNbO₃ Wafers

1.Next-Gen Optical Networks
LiNbO₃ Wafers serve as the backbone for terabit-scale optical transceivers, enabling 800Gbps coherent transmission through advanced nested modulator designs. Our substrates are increasingly adopted for co-packaged optics implementations in AI/ML accelerator systems.
2.6G RF Frontends
The latest generation of LiNbO₃ Wafers supports ultra-wideband filtering up to 20GHz, addressing the spectrum needs of emerging 6G standards. Our materials enable novel acoustic resonator architectures with Q factors surpassing 2000.
3.Quantum Information Systems
Precision-poled LiNbO₃ Wafers form the foundation for entangled photon sources with >90% pair generation efficiency. Our substrates are enabling breakthroughs in photonic quantum computing and secure communication networks.
4.Advanced Sensing Solutions
From automotive LiDAR operating at 1550nm to ultra-sensitive gravimetric sensors, LiNbO₃ Wafers provide the critical transduction platform. Our materials enable sensor resolutions down to single-molecule detection levels.

Key Advantages of LiNbO₃Wafers

1. Unparalleled Electro-Optic Performance
Exceptionally High Electro-Optic Coefficient (r₃₃~30-32 pm/V): Represents the industry benchmark for commercial lithium niobate wafers, enabling 200Gbps+ high-speed optical modulators that far surpass the performance limits of silicon-based or polymer solutions.

Ultra-Low Insertion Loss (<0.1 dB/cm): Achieved through nanoscale polishing (Ra<0.3 nm) and anti-reflection (AR) coatings, significantly enhancing the energy efficiency of optical communication modules.

2. Superior Piezoelectric & Acoustic Properties
Ideal for High-Frequency SAW/BAW Devices: With acoustic velocities of 3500-3800 m/s, these wafers support 6G mmWave (24-100 GHz) filter designs featuring insertion losses <1.0 dB.

High Electromechanical Coupling Coefficient (K²~0.25%): Enhances bandwidth and signal selectivity in RF front-end components, making them suitable for 5G/6G base stations and satellite communications.

3. Broadband Transparency & Nonlinear Optical Effects
Ultra-Wide Optical Transmission Window (350-5000 nm): Covers UV to mid-IR spectra, enabling applications such as:

Quantum Optics: Periodically poled (PPLN) configurations achieve >90% efficiency in entangled photon pair generation.

Laser Systems: Optical parametric oscillation (OPO) delivers tunable wavelength output (1-10 μm).

Exceptional Laser Damage Threshold (>1 GW/cm²): Meets stringent requirements for high-power laser applications.

4. Extreme Environmental Stability
High-Temperature Resistance (Curie point: 1140°C): Maintains stable performance across -200°C to +500°C, ideal for:

Automotive Electronics (engine compartment sensors)

Spacecraft (deep-space optical components)

Radiation Hardness (>1 Mrad TID): Compliant with MIL-STD-883 standards, suitable for nuclear and defense electronics.

5. Customization & Integration Flexibility
Crystal Orientation & Doping Optimization:

X/Y/Z-cut wafers (±0.3° precision)

MgO doping (5 mol%) for enhanced optical damage resistance

Heterogeneous Integration Support:

Compatible with thin-film LiNbO₃-on-Insulator (LNOI) for hybrid integration with silicon photonics (SiPh)

Enables wafer-level bonding for co-packaged optics (CPO)

6. Scalable Production & Cost Efficiency
6-inch (150mm) Wafer Mass Production: Reduces unit costs by 30% compared to traditional 4-inch processes.

Rapid Delivery: Standard products ship in 3 weeks; small-batch prototypes (minimum 5 wafers) deliver in 10 days.