Products News
-
The Largest Buyer of High-Purity Alumina: How Much Do You Know About Sapphire?
Sapphire crystals are grown from high-purity alumina powder with a purity of >99.995%, making them the largest demand area for high-purity alumina. They exhibit high strength, high hardness, and stable chemical properties, enabling them to operate in harsh environments such as high temperature...Read more -
What Do TTV, BOW, WARP, and TIR Mean in Wafers?
When examining semiconductor silicon wafers or substrates made of other materials, we often encounter technical indicators such as: TTV, BOW, WARP, and possibly TIR, STIR, LTV, among others. What parameters do these represent? TTV — Total Thickness Variation BOW — Bow WARP — Warp TIR — ...Read more -
High-Precision Laser Slicing Equipment for 8-Inch SiC Wafers: The Core Technology for Future SiC Wafer Processing
Silicon carbide (SiC) is not only a critical technology for national defense but also a pivotal material for global automotive and energy industries. As the first critical step in SiC single-crystal processing, wafer slicing directly determines the quality of subsequent thinning and polishing. Tr...Read more -
Optical-Grade Silicon Carbide Waveguide AR Glasses: Preparation of High-Purity Semi-Insulating Substrates
Against the backdrop of the AI revolution, AR glasses are gradually entering public consciousness. As a paradigm that seamlessly blends virtual and real worlds, AR glasses differ from VR devices by allowing users to perceive both digitally projected images and ambient environmental light simulta...Read more -
Heteroepitaxial Growth of 3C-SiC on Silicon Substrates with Different Orientations
1. Introduction Despite decades of research, heteroepitaxial 3C-SiC grown on silicon substrates has not yet achieved sufficient crystal quality for industrial electronic applications. Growth is typically performed on Si(100) or Si(111) substrates, each presenting distinct challenges: anti-phase ...Read more -
Silicon Carbide Ceramics vs. Semiconductor Silicon Carbide: The Same Material with Two Distinct Destinies
Silicon carbide (SiC) is a remarkable compound that can be found in both the semiconductor industry and advanced ceramic products. This often leads to confusion among laypeople who may mistake them as the same type of product. In reality, while sharing identical chemical composition, SiC manifest...Read more -
Advances in High-Purity Silicon Carbide Ceramic Preparation Technologies
High-purity silicon carbide (SiC) ceramics have emerged as ideal materials for critical components in semiconductor, aerospace, and chemical industries due to their exceptional thermal conductivity, chemical stability, and mechanical strength. With increasing demands for high-performance, low-pol...Read more -
Technical Principles and Processes of LED Epitaxial Wafers
From the working principle of LEDs, it is evident that the epitaxial wafer material is the core component of an LED. In fact, key optoelectronic parameters such as wavelength, brightness, and forward voltage are largely determined by the epitaxial material. Epitaxial wafer technology and equipmen...Read more -
Key Considerations for High-Quality Silicon Carbide Single Crystal Preparation
The main methods for silicon single crystal preparation include: Physical Vapor Transport (PVT), Top-Seeded Solution Growth (TSSG), and High-Temperature Chemical Vapor Deposition (HT-CVD). Among these, the PVT method is widely adopted in industrial production due to its simple equipment, ease of ...Read more -
Lithium Niobate on Insulator (LNOI): Driving the Advancement of Photonic Integrated Circuits
Introduction Inspired by the success of electronic integrated circuits (EICs), the field of photonic integrated circuits (PICs) has been evolving since its inception in 1969. However, unlike EICs, the development of a universal platform capable of supporting diverse photonic applications remains ...Read more -
Key Considerations for Producing High-Quality Silicon Carbide (SiC) Single Crystals
Key Considerations for Producing High-Quality Silicon Carbide (SiC) Single Crystals The main methods for growing silicon carbide single crystals include Physical Vapor Transport (PVT), Top-Seeded Solution Growth (TSSG), and High-Temperature Chemic...Read more -
Next-Generation LED Epitaxial Wafer Technology: Powering the Future of Lighting
LEDs light up our world, and at the heart of every high-performance LED lies the epitaxial wafer—a critical component that defines its brightness, color, and efficiency. By mastering the science of epitaxial growth, ...Read more