Recently, Beijing Jingfei Semiconductor Technology Co., Ltd., a leading domestic semiconductor equipment manufacturer, has made a significant breakthrough in silicon carbide (SiC) wafer processing technology. The company successfully achieved the lift-off of 12-inch silicon carbide wafers using its independently developed laser lift-off equipment. This breakthrough marks an important step for China in the field of third-generation semiconductor key manufacturing equipment and provides a new solution for cost reduction and efficiency improvement in the global silicon carbide industry. This technology had previously been validated by multiple customers in the 6/8-inch silicon carbide field, with equipment performance reaching international advanced levels.
This technological breakthrough holds multiple significances for the development of the silicon carbide industry, including:
1. Significant Reduction in Production Costs: Compared with the mainstream 6-inch silicon carbide wafers, the 12-inch silicon carbide wafers increase the available area by approximately four times, reducing unit chip costs by 30%-40%.
2. Enhanced Industry Supply Capacity: It addresses the technical bottlenecks in large-size silicon carbide wafer processing, providing equipment support for the global expansion of silicon carbide production capacity.
3. Accelerated Localization Substitution Process: It breaks the technological monopoly of foreign companies in the field of large-size silicon carbide processing equipment, providing important support for the autonomous and controllable development of China’s semiconductor equipment.
4. Promotion of Downstream Application Popularization: Cost reduction will accelerate the application of silicon carbide devices in key fields such as new energy vehicles and renewable energy.
Beijing Jingfei Semiconductor Technology Co., Ltd. is a enterprise of the Chinese Academy of Sciences Institute of Semiconductors, focusing on the research and development, production, and sales of specialized semiconductor equipment. With laser application technology at its core, the company has developed a series of semiconductor processing equipment with independent intellectual property rights, serving major domestic semiconductor manufacturing customers.
The CEO of Jingfei Semiconductor stated, “We always adhere to technological innovation to drive industrial progress. The successful development of the 12-inch silicon carbide laser lift-off technology is not only a reflection of the company’s technical capabilities but also benefits from the strong support of the Beijing Municipal Science and Technology Commission, the Chinese Academy of Sciences Institute of Semiconductors, and the key special project ‘Disruptive Technological Innovation’ organized and implemented by the Beijing-Tianjin-Hebei National Technological Innovation Center. In the future, we will continue to increase R&D investment to provide customers with more high-quality semiconductor equipment solutions.”
Conclusion
Looking ahead, XKH will leverage its comprehensive silicon carbide substrate product portfolio (covering 2 to 12 inches with bonding and customized processing capabilities) and multi-material technology (including 4H-N, 4H-SEMI, 4H-6H/P, 3C-N, etc.) to actively address the technological evolution and market changes in the SiC industry. By continuously improving wafer yield, reducing production costs, and deepening collaboration with semiconductor equipment manufacturers and end customers, XKH is committed to providing high-performance and high-reliability substrate solutions for global new energy, high-voltage electronics, and high-temperature industrial applications. We aim to help customers overcome technical barriers and achieve scalable deployment, positioning ourselves as a trusted core materials partner in the SiC value chain.
Post time: Sep-09-2025